Speed characterization of p-i-n photodiode based on GaSb/GaInAsSb/GaAlAsSb heterostructure with frontal bridge contact at 1.9 µm

Dmitrii Vlasov; Gleb Konovalov; Igor Andreev; Yury Yakovlev; Vasilii Voropaev; Aleksandr Donodin; Mikhail Tarabrin; Daniil Batov; Ekaterina Kunitsyna; Vladimir Lazarev

doi:10.1364/ao.418139

Speed characterization of p-i-n photodiode based on GaSb/GaInAsSb/GaAlAsSb heterostructure with frontal bridge contact at 1.9 µm

Dmitrii Vlasov, Gleb Konovalov, Igor Andreev, Yury Yakovlev, Vasilii Voropaev, Aleksandr Donodin, Mikhail Tarabrin, Daniil Batov, Ekaterina Kunitsyna, Vladimir Lazarev

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Abstract

We report a study of the response function parameters (amplitude and rise/fall time) of a high-speed GaSb/GaInAsSb/GaAlAsSb photodiode operating at 1.9 µm as a function of optical input power and reverse bias voltage. The experimental measurement results yield the optimal pulse energy and optimal reverse bias voltage for the photodiode. The 44 ps minimal rise time of the response function and 3.6 GHz bandwidth are achieved under a 3 V reverse bias voltage and pulse energy in the 0.27–2.5 pJ range.

Original language	English
Pages (from-to)	2263
Number of pages	1
Journal	Applied Optics
Volume	60
Issue number	8
Early online date	5 Mar 2021
DOIs	https://doi.org/10.1364/ao.418139
Publication status	Published - 10 Mar 2021

Keywords

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)
Electrical and Electronic Engineering

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10.1364/ao.418139

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title = "Speed characterization of p-i-n photodiode based on GaSb/GaInAsSb/GaAlAsSb heterostructure with frontal bridge contact at 1.9 µm",

abstract = "We report a study of the response function parameters (amplitude and rise/fall time) of a high-speed GaSb/GaInAsSb/GaAlAsSb photodiode operating at 1.9 µm as a function of optical input power and reverse bias voltage. The experimental measurement results yield the optimal pulse energy and optimal reverse bias voltage for the photodiode. The 44 ps minimal rise time of the response function and 3.6 GHz bandwidth are achieved under a 3 V reverse bias voltage and pulse energy in the 0.27–2.5 pJ range.",

keywords = "Atomic and Molecular Physics, and Optics, Engineering (miscellaneous), Electrical and Electronic Engineering",

author = "Dmitrii Vlasov and Gleb Konovalov and Igor Andreev and Yury Yakovlev and Vasilii Voropaev and Aleksandr Donodin and Mikhail Tarabrin and Daniil Batov and Ekaterina Kunitsyna and Vladimir Lazarev",

year = "2021",

month = mar,

day = "10",

doi = "10.1364/ao.418139",

language = "English",

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TY - JOUR

T1 - Speed characterization of p-i-n photodiode based on GaSb/GaInAsSb/GaAlAsSb heterostructure with frontal bridge contact at 1.9 µm

AU - Vlasov, Dmitrii

AU - Konovalov, Gleb

AU - Andreev, Igor

AU - Yakovlev, Yury

AU - Voropaev, Vasilii

AU - Donodin, Aleksandr

AU - Tarabrin, Mikhail

AU - Batov, Daniil

AU - Kunitsyna, Ekaterina

AU - Lazarev, Vladimir

PY - 2021/3/10

Y1 - 2021/3/10

N2 - We report a study of the response function parameters (amplitude and rise/fall time) of a high-speed GaSb/GaInAsSb/GaAlAsSb photodiode operating at 1.9 µm as a function of optical input power and reverse bias voltage. The experimental measurement results yield the optimal pulse energy and optimal reverse bias voltage for the photodiode. The 44 ps minimal rise time of the response function and 3.6 GHz bandwidth are achieved under a 3 V reverse bias voltage and pulse energy in the 0.27–2.5 pJ range.

AB - We report a study of the response function parameters (amplitude and rise/fall time) of a high-speed GaSb/GaInAsSb/GaAlAsSb photodiode operating at 1.9 µm as a function of optical input power and reverse bias voltage. The experimental measurement results yield the optimal pulse energy and optimal reverse bias voltage for the photodiode. The 44 ps minimal rise time of the response function and 3.6 GHz bandwidth are achieved under a 3 V reverse bias voltage and pulse energy in the 0.27–2.5 pJ range.

KW - Atomic and Molecular Physics, and Optics

KW - Engineering (miscellaneous)

KW - Electrical and Electronic Engineering

UR - https://opg.optica.org/ao/abstract.cfm?uri=ao-60-8-2263

U2 - 10.1364/ao.418139

DO - 10.1364/ao.418139

M3 - Article

SN - 1559-128X

VL - 60

SP - 2263

JO - Applied Optics

JF - Applied Optics

IS - 8

ER -

Speed characterization of p-i-n photodiode based on GaSb/GaInAsSb/GaAlAsSb heterostructure with frontal bridge contact at 1.9 µm

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