Spin dependent photoconductivity in silicon-on-sapphire

R.C. Barklie, C.O. Raifeartaigh, L. Bradley, A.M. Hodge

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Resonant and non resonant spin dependent photoconductivity is observed in(100) silicon films grown on sapphire by CVD and MBE techniques. The CVD films are either in their as-grown state or have undergone single or double solid phase epitaxial regrowth. For all samples, a resonant decrease in photoconductivity is observed at a field of about 0.34 T for a microwave frequency of about 9.7 GHz and at about 3.3 mT when the frequency is about 92 MHz. For all samples the maximum fractional change in photoconductivity is approximately 10-4 independent of magnetic field strength.
Original languageEnglish
Title of host publicationDefects in semiconductors 17
EditorsHelmut Heinrich, Wolfgang Jantsch
Place of PublicationPfaffikon (CH)
PublisherTrans Tech Publications
Pages195-200
Number of pages6
VolumePart 1
ISBN (Print)978-0-87849-671-6
Publication statusPublished - 1994
Event17th International Conference on Defects in Semiconductors - Gmunden, Austria
Duration: 18 Jul 199323 Jul 1993

Publication series

NameMaterials science forum
PublisherTrans Tech Publications
Volume143-144
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference17th International Conference on Defects in Semiconductors
CountryAustria
Period18/07/9323/07/93

Fingerprint

photoconductivity
sapphire
silicon
vapor deposition
microwave frequencies
silicon films
solid phases
field strength
magnetic fields

Cite this

Barklie, R. C., Raifeartaigh, C. O., Bradley, L., & Hodge, A. M. (1994). Spin dependent photoconductivity in silicon-on-sapphire. In H. Heinrich, & W. Jantsch (Eds.), Defects in semiconductors 17 (Vol. Part 1, pp. 195-200). (Materials science forum; Vol. 143-144). Pfaffikon (CH): Trans Tech Publications.
Barklie, R.C. ; Raifeartaigh, C.O. ; Bradley, L. ; Hodge, A.M. / Spin dependent photoconductivity in silicon-on-sapphire. Defects in semiconductors 17. editor / Helmut Heinrich ; Wolfgang Jantsch. Vol. Part 1 Pfaffikon (CH) : Trans Tech Publications, 1994. pp. 195-200 (Materials science forum).
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abstract = "Resonant and non resonant spin dependent photoconductivity is observed in(100) silicon films grown on sapphire by CVD and MBE techniques. The CVD films are either in their as-grown state or have undergone single or double solid phase epitaxial regrowth. For all samples, a resonant decrease in photoconductivity is observed at a field of about 0.34 T for a microwave frequency of about 9.7 GHz and at about 3.3 mT when the frequency is about 92 MHz. For all samples the maximum fractional change in photoconductivity is approximately 10-4 independent of magnetic field strength.",
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Barklie, RC, Raifeartaigh, CO, Bradley, L & Hodge, AM 1994, Spin dependent photoconductivity in silicon-on-sapphire. in H Heinrich & W Jantsch (eds), Defects in semiconductors 17. vol. Part 1, Materials science forum, vol. 143-144, Trans Tech Publications, Pfaffikon (CH), pp. 195-200, 17th International Conference on Defects in Semiconductors, Austria, 18/07/93.

Spin dependent photoconductivity in silicon-on-sapphire. / Barklie, R.C.; Raifeartaigh, C.O.; Bradley, L.; Hodge, A.M.

Defects in semiconductors 17. ed. / Helmut Heinrich; Wolfgang Jantsch. Vol. Part 1 Pfaffikon (CH) : Trans Tech Publications, 1994. p. 195-200 (Materials science forum; Vol. 143-144).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Spin dependent photoconductivity in silicon-on-sapphire

AU - Barklie, R.C.

AU - Raifeartaigh, C.O.

AU - Bradley, L.

AU - Hodge, A.M.

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Y1 - 1994

N2 - Resonant and non resonant spin dependent photoconductivity is observed in(100) silicon films grown on sapphire by CVD and MBE techniques. The CVD films are either in their as-grown state or have undergone single or double solid phase epitaxial regrowth. For all samples, a resonant decrease in photoconductivity is observed at a field of about 0.34 T for a microwave frequency of about 9.7 GHz and at about 3.3 mT when the frequency is about 92 MHz. For all samples the maximum fractional change in photoconductivity is approximately 10-4 independent of magnetic field strength.

AB - Resonant and non resonant spin dependent photoconductivity is observed in(100) silicon films grown on sapphire by CVD and MBE techniques. The CVD films are either in their as-grown state or have undergone single or double solid phase epitaxial regrowth. For all samples, a resonant decrease in photoconductivity is observed at a field of about 0.34 T for a microwave frequency of about 9.7 GHz and at about 3.3 mT when the frequency is about 92 MHz. For all samples the maximum fractional change in photoconductivity is approximately 10-4 independent of magnetic field strength.

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M3 - Conference contribution

SN - 978-0-87849-671-6

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T3 - Materials science forum

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BT - Defects in semiconductors 17

A2 - Heinrich, Helmut

A2 - Jantsch, Wolfgang

PB - Trans Tech Publications

CY - Pfaffikon (CH)

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Barklie RC, Raifeartaigh CO, Bradley L, Hodge AM. Spin dependent photoconductivity in silicon-on-sapphire. In Heinrich H, Jantsch W, editors, Defects in semiconductors 17. Vol. Part 1. Pfaffikon (CH): Trans Tech Publications. 1994. p. 195-200. (Materials science forum).