Stealth dicing of sapphire wafers with near infra-red femtosecond pulses

Amit Yadav; Hani Kbashi; Stanislav Kolpakov; Neil Gordon; Kaiming Zhou; Edik U. Rafailov

doi:10.1007/s00339-017-0927-0

Stealth dicing of sapphire wafers with near infra-red femtosecond pulses

Amit Yadav^*
, Hani Kbashi
, Stanislav Kolpakov
, Neil Gordon
, Kaiming Zhou
, Edik U. Rafailov

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

36 Citations (SciVal)

301 Downloads (Pure)

Abstract

The quality of the reflecting faces after dicing is critical for the fabrication of efficient and stable laser diodes emitting in the green–violet region. However, high-quality faces can be difficult to achieve for devices grown on a sapphire substrate as this material is difficult to cleave cleanly. We have therefore investigated a technology known as “stealth dicing”. The technology uses a pulsed laser to damage a plane of material inside of the wafer due to multi-photon absorption instead of cutting through the wafer surface. If the damage is induced in a line of stress points, the sample can then be cleaved easily along the damaged plane to leave a high-quality surface. The use of this technique also reduces thermal damage and debris.

Original language	English
Article number	369
Number of pages	7
Journal	Applied Physics A
Volume	123
Issue number	5
Early online date	25 Apr 2017
DOIs	https://doi.org/10.1007/s00339-017-0927-0
Publication status	Published - May 2017

Bibliographical note

© The Author(s) 2017. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Access to Document

10.1007/s00339-017-0927-0Licence: CC BY 3.0

Stealth dicing of sapphire wafers with near infra-red femtosecond pulses
© The Author(s) 2017. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Final published version, 2.34 MBLicence: CC BY 3.0

Cite this

@article{19d1068783454fe090b846098a04ed6c,

title = "Stealth dicing of sapphire wafers with near infra-red femtosecond pulses",

abstract = "The quality of the reflecting faces after dicing is critical for the fabrication of efficient and stable laser diodes emitting in the green–violet region. However, high-quality faces can be difficult to achieve for devices grown on a sapphire substrate as this material is difficult to cleave cleanly. We have therefore investigated a technology known as “stealth dicing”. The technology uses a pulsed laser to damage a plane of material inside of the wafer due to multi-photon absorption instead of cutting through the wafer surface. If the damage is induced in a line of stress points, the sample can then be cleaved easily along the damaged plane to leave a high-quality surface. The use of this technique also reduces thermal damage and debris.",

author = "Amit Yadav and Hani Kbashi and Stanislav Kolpakov and Neil Gordon and Kaiming Zhou and Rafailov, \{Edik U.\}",

note = "{\textcopyright} The Author(s) 2017. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.",

year = "2017",

month = may,

doi = "10.1007/s00339-017-0927-0",

language = "English",

volume = "123",

journal = "Applied Physics A",

issn = "0947-8396",

publisher = "Springer",

number = "5",

}

TY - JOUR

T1 - Stealth dicing of sapphire wafers with near infra-red femtosecond pulses

AU - Yadav, Amit

AU - Kbashi, Hani

AU - Kolpakov, Stanislav

AU - Gordon, Neil

AU - Zhou, Kaiming

AU - Rafailov, Edik U.

N1 - © The Author(s) 2017. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

PY - 2017/5

Y1 - 2017/5

N2 - The quality of the reflecting faces after dicing is critical for the fabrication of efficient and stable laser diodes emitting in the green–violet region. However, high-quality faces can be difficult to achieve for devices grown on a sapphire substrate as this material is difficult to cleave cleanly. We have therefore investigated a technology known as “stealth dicing”. The technology uses a pulsed laser to damage a plane of material inside of the wafer due to multi-photon absorption instead of cutting through the wafer surface. If the damage is induced in a line of stress points, the sample can then be cleaved easily along the damaged plane to leave a high-quality surface. The use of this technique also reduces thermal damage and debris.

AB - The quality of the reflecting faces after dicing is critical for the fabrication of efficient and stable laser diodes emitting in the green–violet region. However, high-quality faces can be difficult to achieve for devices grown on a sapphire substrate as this material is difficult to cleave cleanly. We have therefore investigated a technology known as “stealth dicing”. The technology uses a pulsed laser to damage a plane of material inside of the wafer due to multi-photon absorption instead of cutting through the wafer surface. If the damage is induced in a line of stress points, the sample can then be cleaved easily along the damaged plane to leave a high-quality surface. The use of this technique also reduces thermal damage and debris.

UR - https://www.scopus.com/pages/publications/85018747693

UR - https://link.springer.com/article/10.1007/s00339-017-0927-0

U2 - 10.1007/s00339-017-0927-0

DO - 10.1007/s00339-017-0927-0

M3 - Article

AN - SCOPUS:85018747693

SN - 0947-8396

VL - 123

JO - Applied Physics A

JF - Applied Physics A

IS - 5

M1 - 369

ER -

Stealth dicing of sapphire wafers with near infra-red femtosecond pulses

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this