Stealth dicing of sapphire wafers with near infra-red femtosecond pulses

Amit Yadav; Hani Kbashi; Stanislav Kolpakov; Neil Gordon; Kaiming Zhou; Edik U. Rafailov

doi:10.1007/s00339-017-0927-0

Stealth dicing of sapphire wafers with near infra-red femtosecond pulses

Amit Yadav^*, Hani Kbashi, Stanislav Kolpakov, Neil Gordon, Kaiming Zhou, Edik U. Rafailov

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

The quality of the reflecting faces after dicing is critical for the fabrication of efficient and stable laser diodes emitting in the green–violet region. However, high-quality faces can be difficult to achieve for devices grown on a sapphire substrate as this material is difficult to cleave cleanly. We have therefore investigated a technology known as “stealth dicing”. The technology uses a pulsed laser to damage a plane of material inside of the wafer due to multi-photon absorption instead of cutting through the wafer surface. If the damage is induced in a line of stress points, the sample can then be cleaved easily along the damaged plane to leave a high-quality surface. The use of this technique also reduces thermal damage and debris.

Original language	English
Article number	369
Number of pages	7
Journal	Applied Physics A
Volume	123
Issue number	5
Early online date	25 Apr 2017
DOIs	https://doi.org/10.1007/s00339-017-0927-0
Publication status	Published - May 2017

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© The Author(s) 2017. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

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Stealth dicing of sapphire wafers with near infra-red femtosecond pulses
© The Author(s) 2017. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Final published version, 2.34 MBLicence: CC BY 3.0

Cite this

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abstract = "The quality of the reflecting faces after dicing is critical for the fabrication of efficient and stable laser diodes emitting in the green–violet region. However, high-quality faces can be difficult to achieve for devices grown on a sapphire substrate as this material is difficult to cleave cleanly. We have therefore investigated a technology known as “stealth dicing”. The technology uses a pulsed laser to damage a plane of material inside of the wafer due to multi-photon absorption instead of cutting through the wafer surface. If the damage is induced in a line of stress points, the sample can then be cleaved easily along the damaged plane to leave a high-quality surface. The use of this technique also reduces thermal damage and debris.",

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AU - Rafailov, Edik U.

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Stealth dicing of sapphire wafers with near infra-red femtosecond pulses

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