The effect of stress on vacancy cluster configurations in silicon is examined using molecular dynamics. At zero pressure, the shape and stability of the vacancy clusters agrees with previous atomistic results. When stress is applied the orientation of small planar clusters changes to reduce the strain energy. The preferred orientation for the vacancy clusters under stress agrees with the experimentally observed orientations of hydrogen platelets in the high stress regions of hydrogen implanted silicon. These results suggest a theory for hydrogen platelet formation.
Bibliographical note©2005 American Physical Society. Stress-induced platelet formation in silicon: A molecular dynamics study
J. G. Swadener, M. I. Baskes, and M. Nastasi
Phys. Rev. B 72, 201202(R) – Published 30 November 2005