Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films

Hui Xu; Jian Jun Liu; Hai Tao Ye; D. J. Coathup; A. V. Khomich; Xiao Jun Hu

doi:10.1088/1674-1056/27/9/096104

Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films

Hui Xu
, Jian Jun Liu
, Hai Tao Ye
, D. J. Coathup
, A. V. Khomich
, Xiao Jun Hu^*

^*Corresponding author for this work

Zhejiang University of Technology
Russian Academy of Sciences
National Research Nuclear University MEPhI

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We investigate the structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond (UNCD) films. Impedance spectroscopy measurements show that the impedance of diamond grains is relatively stable, while that of grain boundaries (GBs) (R_b) significantly increases after the C⁺ implantation, and decreases with the increase in the annealing temperature (T_a) from 650 °Cto 1000 °C. This implies that the C⁺ implantation has a more significant impact on the conductivity of GBs. Conductive atomic force microscopy demonstrates that the number of conductive sites increases in GB regions at T_a above 900 °C, owing to the formation of a nanographitic phase confirmed by high-resolution transmission electronic microscopy. Visible-light Raman spectra show that resistive trans-polyacetylene oligomers desorb from GBs at T_a above 900 °C, which leads to lower R_b of samples annealed at 900 and 1000 °C. With the increase in T_a to 1000 °C, diamond grains become smaller with longer GBs modified by a more ordered nanographitic phase, supplying more conductive sites and leading to a lower R_b

Original language	English
Article number	096104
Journal	Chinese Physics B
Volume	27
Issue number	9
DOIs	https://doi.org/10.1088/1674-1056/27/9/096104
Publication status	Published - 1 Sept 2018

Funding

∗Project supported by the National Natural Science Foundation of China (Grant Nos. 50972129 and 50602039), the International Science Technology Cooperation Program of China (Grant No. 2014DFR51160), the National Key Research and Development Program of China (Grant No. 2016YFE0133200), European Union’s Horizon 2020 Research and Innovation Staff Exchange (RISE) Scheme (Grant No. 734578), One Belt and One Road International Cooperation Project from the Key Research and Development Program of Zhejiang Province, China (Grant No. 2018C04021), and Xinmiao Talents Program of Zhejiang Province, China (Grant No. 2017R403078). †Corresponding author. E-mail: [email protected] ‡Corresponding author. E-mail: [email protected]

Keywords

Annealing
C-ion implantation
Electrical properties
Ultrananocrystalline diamond

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10.1088/1674-1056/27/9/096104

Cite this

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title = "Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films",

abstract = "We investigate the structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond (UNCD) films. Impedance spectroscopy measurements show that the impedance of diamond grains is relatively stable, while that of grain boundaries (GBs) (Rb) significantly increases after the C+ implantation, and decreases with the increase in the annealing temperature (Ta) from 650 °Cto 1000 °C. This implies that the C+ implantation has a more significant impact on the conductivity of GBs. Conductive atomic force microscopy demonstrates that the number of conductive sites increases in GB regions at Ta above 900 °C, owing to the formation of a nanographitic phase confirmed by high-resolution transmission electronic microscopy. Visible-light Raman spectra show that resistive trans-polyacetylene oligomers desorb from GBs at Ta above 900 °C, which leads to lower Rb of samples annealed at 900 and 1000 °C. With the increase in Ta to 1000 °C, diamond grains become smaller with longer GBs modified by a more ordered nanographitic phase, supplying more conductive sites and leading to a lower Rb ",

keywords = "Annealing, C-ion implantation, Electrical properties, Ultrananocrystalline diamond",

author = "Hui Xu and Liu, \{Jian Jun\} and Ye, \{Hai Tao\} and Coathup, \{D. J.\} and Khomich, \{A. V.\} and Hu, \{Xiao Jun\}",

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doi = "10.1088/1674-1056/27/9/096104",

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T1 - Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films

AU - Xu, Hui

AU - Liu, Jian Jun

AU - Ye, Hai Tao

AU - Coathup, D. J.

AU - Khomich, A. V.

AU - Hu, Xiao Jun

PY - 2018/9/1

Y1 - 2018/9/1

N2 - We investigate the structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond (UNCD) films. Impedance spectroscopy measurements show that the impedance of diamond grains is relatively stable, while that of grain boundaries (GBs) (Rb) significantly increases after the C+ implantation, and decreases with the increase in the annealing temperature (Ta) from 650 °Cto 1000 °C. This implies that the C+ implantation has a more significant impact on the conductivity of GBs. Conductive atomic force microscopy demonstrates that the number of conductive sites increases in GB regions at Ta above 900 °C, owing to the formation of a nanographitic phase confirmed by high-resolution transmission electronic microscopy. Visible-light Raman spectra show that resistive trans-polyacetylene oligomers desorb from GBs at Ta above 900 °C, which leads to lower Rb of samples annealed at 900 and 1000 °C. With the increase in Ta to 1000 °C, diamond grains become smaller with longer GBs modified by a more ordered nanographitic phase, supplying more conductive sites and leading to a lower Rb

AB - We investigate the structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond (UNCD) films. Impedance spectroscopy measurements show that the impedance of diamond grains is relatively stable, while that of grain boundaries (GBs) (Rb) significantly increases after the C+ implantation, and decreases with the increase in the annealing temperature (Ta) from 650 °Cto 1000 °C. This implies that the C+ implantation has a more significant impact on the conductivity of GBs. Conductive atomic force microscopy demonstrates that the number of conductive sites increases in GB regions at Ta above 900 °C, owing to the formation of a nanographitic phase confirmed by high-resolution transmission electronic microscopy. Visible-light Raman spectra show that resistive trans-polyacetylene oligomers desorb from GBs at Ta above 900 °C, which leads to lower Rb of samples annealed at 900 and 1000 °C. With the increase in Ta to 1000 °C, diamond grains become smaller with longer GBs modified by a more ordered nanographitic phase, supplying more conductive sites and leading to a lower Rb

KW - Annealing

KW - C-ion implantation

KW - Electrical properties

KW - Ultrananocrystalline diamond

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ER -

Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films

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