TY - JOUR
T1 - Structural and electrical properties of Na0.5Bi4.0RE0.5Ti4O15 (RE=Tm, Yb and Lu) thin films
AU - Raghavan, Chinnambedu Murugesan
AU - Choi, Ji Ya
AU - Kim, Sang Su
PY - 2016/6/1
Y1 - 2016/6/1
N2 - In the current study, a series of lanthanide ions, Tm, Yb and Lu, were used for doping at the Bi-site of the Aurivillius phase Na0.5Bi4.5Ti4O15 (NaBTi) to investigate the structural, electrical and ferroelectric properties of the thin films. In this regard, Na0.5Bi4.5Ti4O15 and the rare earth metal ion-doped Na0.5Bi4.0RE0.5i4O15 (RE=Tm, Yb and Lu, denoted by NaBTmTi, NaBYbTi, and NaBLuTi, respectively) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Formations of the Aurivillius phase orthorhombic structures for all the thin films were confirmed by X-ray diffraction and Raman spectroscopic studies. Based on the experimental results, the rare earth metal ion-doped Na0.5Bi4.0RE0.5Ti4O15 thin films exhibited a low leakage current and the improved ferroelectric properties. Among the thin films, the NaBLuTi thin film exhibited a low leakage current density of 6.96×10-7 A/cm2 at an applied electric field of 100 kV/cm and a large remnant polarization (2Pr) of 26.7 μC/cm2 at an applied electric field of 475 kV/cm.
AB - In the current study, a series of lanthanide ions, Tm, Yb and Lu, were used for doping at the Bi-site of the Aurivillius phase Na0.5Bi4.5Ti4O15 (NaBTi) to investigate the structural, electrical and ferroelectric properties of the thin films. In this regard, Na0.5Bi4.5Ti4O15 and the rare earth metal ion-doped Na0.5Bi4.0RE0.5i4O15 (RE=Tm, Yb and Lu, denoted by NaBTmTi, NaBYbTi, and NaBLuTi, respectively) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Formations of the Aurivillius phase orthorhombic structures for all the thin films were confirmed by X-ray diffraction and Raman spectroscopic studies. Based on the experimental results, the rare earth metal ion-doped Na0.5Bi4.0RE0.5Ti4O15 thin films exhibited a low leakage current and the improved ferroelectric properties. Among the thin films, the NaBLuTi thin film exhibited a low leakage current density of 6.96×10-7 A/cm2 at an applied electric field of 100 kV/cm and a large remnant polarization (2Pr) of 26.7 μC/cm2 at an applied electric field of 475 kV/cm.
KW - A. Films
KW - A. Sol-gel processes
KW - C. Electrical properties
KW - C. Ferroelectric properties
UR - http://www.scopus.com/inward/record.url?scp=84960153594&partnerID=8YFLogxK
UR - https://www.sciencedirect.com/science/article/pii/S0272884216301729?via%3Dihub
U2 - 10.1016/j.ceramint.2016.03.040
DO - 10.1016/j.ceramint.2016.03.040
M3 - Article
AN - SCOPUS:84960153594
SN - 0272-8842
VL - 42
SP - 9577
EP - 9582
JO - Ceramics International
JF - Ceramics International
IS - 8
ER -