Structural and electrical properties of Na0.5Bi4.0RE0.5Ti4O15 (RE=Tm, Yb and Lu) thin films

Chinnambedu Murugesan Raghavan; Ji Ya Choi; Sang Su Kim

doi:10.1016/j.ceramint.2016.03.040

Structural and electrical properties of Na_0.5Bi_4.0RE_0.5Ti₄O₁₅ (RE=Tm, Yb and Lu) thin films

Chinnambedu Murugesan Raghavan
, Ji Ya Choi
, Sang Su Kim^*

^*Corresponding author for this work

Changwon National University

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In the current study, a series of lanthanide ions, Tm, Yb and Lu, were used for doping at the Bi-site of the Aurivillius phase Na_0.5Bi_4.5Ti₄O₁₅ (NaBTi) to investigate the structural, electrical and ferroelectric properties of the thin films. In this regard, Na_0.5Bi_4.5Ti₄O₁₅ and the rare earth metal ion-doped Na_0.5Bi_4.0RE_0.5i₄O₁₅ (RE=Tm, Yb and Lu, denoted by NaBTmTi, NaBYbTi, and NaBLuTi, respectively) thin films were deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. Formations of the Aurivillius phase orthorhombic structures for all the thin films were confirmed by X-ray diffraction and Raman spectroscopic studies. Based on the experimental results, the rare earth metal ion-doped Na_0.5Bi_4.0RE_0.5Ti₄O₁₅ thin films exhibited a low leakage current and the improved ferroelectric properties. Among the thin films, the NaBLuTi thin film exhibited a low leakage current density of 6.96×10^-7 A/cm² at an applied electric field of 100 kV/cm and a large remnant polarization (2P_r) of 26.7 μC/cm² at an applied electric field of 475 kV/cm.

Original language	English
Pages (from-to)	9577-9582
Number of pages	6
Journal	Ceramics International
Volume	42
Issue number	8
DOIs	https://doi.org/10.1016/j.ceramint.2016.03.040
Publication status	Published - 1 Jun 2016

Funding

This work was supported by Priority Research Centers Program through National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2010-0029634 ).

Keywords

A. Films
A. Sol-gel processes
C. Electrical properties
C. Ferroelectric properties

Access to Document

10.1016/j.ceramint.2016.03.040

Cite this

@article{5d1d2647cc3948289e934c5cc66036e6,

title = "Structural and electrical properties of Na0.5Bi4.0RE0.5Ti4O15 (RE=Tm, Yb and Lu) thin films",

abstract = "In the current study, a series of lanthanide ions, Tm, Yb and Lu, were used for doping at the Bi-site of the Aurivillius phase Na0.5Bi4.5Ti4O15 (NaBTi) to investigate the structural, electrical and ferroelectric properties of the thin films. In this regard, Na0.5Bi4.5Ti4O15 and the rare earth metal ion-doped Na0.5Bi4.0RE0.5i4O15 (RE=Tm, Yb and Lu, denoted by NaBTmTi, NaBYbTi, and NaBLuTi, respectively) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Formations of the Aurivillius phase orthorhombic structures for all the thin films were confirmed by X-ray diffraction and Raman spectroscopic studies. Based on the experimental results, the rare earth metal ion-doped Na0.5Bi4.0RE0.5Ti4O15 thin films exhibited a low leakage current and the improved ferroelectric properties. Among the thin films, the NaBLuTi thin film exhibited a low leakage current density of 6.96×10-7 A/cm2 at an applied electric field of 100 kV/cm and a large remnant polarization (2Pr) of 26.7 μC/cm2 at an applied electric field of 475 kV/cm.",

keywords = "A. Films, A. Sol-gel processes, C. Electrical properties, C. Ferroelectric properties",

author = "Raghavan, \{Chinnambedu Murugesan\} and Choi, \{Ji Ya\} and Kim, \{Sang Su\}",

year = "2016",

month = jun,

day = "1",

doi = "10.1016/j.ceramint.2016.03.040",

language = "English",

volume = "42",

pages = "9577--9582",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier",

number = "8",

}

TY - JOUR

T1 - Structural and electrical properties of Na0.5Bi4.0RE0.5Ti4O15 (RE=Tm, Yb and Lu) thin films

AU - Raghavan, Chinnambedu Murugesan

AU - Choi, Ji Ya

AU - Kim, Sang Su

PY - 2016/6/1

Y1 - 2016/6/1

N2 - In the current study, a series of lanthanide ions, Tm, Yb and Lu, were used for doping at the Bi-site of the Aurivillius phase Na0.5Bi4.5Ti4O15 (NaBTi) to investigate the structural, electrical and ferroelectric properties of the thin films. In this regard, Na0.5Bi4.5Ti4O15 and the rare earth metal ion-doped Na0.5Bi4.0RE0.5i4O15 (RE=Tm, Yb and Lu, denoted by NaBTmTi, NaBYbTi, and NaBLuTi, respectively) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Formations of the Aurivillius phase orthorhombic structures for all the thin films were confirmed by X-ray diffraction and Raman spectroscopic studies. Based on the experimental results, the rare earth metal ion-doped Na0.5Bi4.0RE0.5Ti4O15 thin films exhibited a low leakage current and the improved ferroelectric properties. Among the thin films, the NaBLuTi thin film exhibited a low leakage current density of 6.96×10-7 A/cm2 at an applied electric field of 100 kV/cm and a large remnant polarization (2Pr) of 26.7 μC/cm2 at an applied electric field of 475 kV/cm.

AB - In the current study, a series of lanthanide ions, Tm, Yb and Lu, were used for doping at the Bi-site of the Aurivillius phase Na0.5Bi4.5Ti4O15 (NaBTi) to investigate the structural, electrical and ferroelectric properties of the thin films. In this regard, Na0.5Bi4.5Ti4O15 and the rare earth metal ion-doped Na0.5Bi4.0RE0.5i4O15 (RE=Tm, Yb and Lu, denoted by NaBTmTi, NaBYbTi, and NaBLuTi, respectively) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Formations of the Aurivillius phase orthorhombic structures for all the thin films were confirmed by X-ray diffraction and Raman spectroscopic studies. Based on the experimental results, the rare earth metal ion-doped Na0.5Bi4.0RE0.5Ti4O15 thin films exhibited a low leakage current and the improved ferroelectric properties. Among the thin films, the NaBLuTi thin film exhibited a low leakage current density of 6.96×10-7 A/cm2 at an applied electric field of 100 kV/cm and a large remnant polarization (2Pr) of 26.7 μC/cm2 at an applied electric field of 475 kV/cm.

KW - A. Films

KW - A. Sol-gel processes

KW - C. Electrical properties

KW - C. Ferroelectric properties

UR - https://www.scopus.com/pages/publications/84960153594

UR - https://www.sciencedirect.com/science/article/pii/S0272884216301729?via%3Dihub

U2 - 10.1016/j.ceramint.2016.03.040

DO - 10.1016/j.ceramint.2016.03.040

M3 - Article

AN - SCOPUS:84960153594

SN - 0272-8842

VL - 42

SP - 9577

EP - 9582

JO - Ceramics International

JF - Ceramics International

IS - 8

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