Structural, electrical and ferroelectric properties of acceptor-doped Na0.5Bi4.5Ti4O15 thin films prepared by a chemical solution deposition method

Jin Won Kim; Chinnambedu Murugesan Raghavan; Sang Su Kim

doi:10.1016/j.ceramint.2014.09.092

Structural, electrical and ferroelectric properties of acceptor-doped Na_0.5Bi_4.5Ti₄O₁₅ thin films prepared by a chemical solution deposition method

Jin Won Kim, Chinnambedu Murugesan Raghavan, Sang Su Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of acceptor ion doping on the structural, electrical and ferroelectric properties of a Na_0.5Bi_4.5Ti₄O₁₅ thin film were investigated. Pure Na_0.5Bi_4.5Ti₄O₁₅ (NaBTi) and acceptor-doped Na_0.5Bi_4.5Ti_3.97M_0.03O_15-δ (M = Cr²⁺ and Fe²⁺ (NaBTCr and NaBTFe)) thin films were prepared by using chemical solution deposition. X-ray diffraction and Raman spectroscopy studies revealed the formation of orthorhombic structures for all the thin films without any detectable secondary phases. The NaBTCr and NaBTFe thin films exhibited improved electrical and ferroelectric properties compared to the NaBTi thin film, which could be explained by micro-structural changes and the formation of a defect complex that minimizes the interactions between the chemical defects and domain walls.

Original language	English
Pages (from-to)	1567-1571
Number of pages	5
Journal	Ceramics International
Volume	41
Issue number	1, Part B
DOIs	https://doi.org/10.1016/j.ceramint.2014.09.092
Publication status	Published - 1 Jan 2015

Keywords

A. Films
B. X-ray methods
C. Electrical properties
C. Ferroelectric properties

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10.1016/j.ceramint.2014.09.092

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@article{1d99293a73b74177a43c794ae2d254b2,

title = "Structural, electrical and ferroelectric properties of acceptor-doped Na0.5Bi4.5Ti4O15 thin films prepared by a chemical solution deposition method",

abstract = "The effects of acceptor ion doping on the structural, electrical and ferroelectric properties of a Na0.5Bi4.5Ti4O15 thin film were investigated. Pure Na0.5Bi4.5Ti4O15 (NaBTi) and acceptor-doped Na0.5Bi4.5Ti3.97M0.03O15-δ (M = Cr2+ and Fe2+ (NaBTCr and NaBTFe)) thin films were prepared by using chemical solution deposition. X-ray diffraction and Raman spectroscopy studies revealed the formation of orthorhombic structures for all the thin films without any detectable secondary phases. The NaBTCr and NaBTFe thin films exhibited improved electrical and ferroelectric properties compared to the NaBTi thin film, which could be explained by micro-structural changes and the formation of a defect complex that minimizes the interactions between the chemical defects and domain walls.",

keywords = "A. Films, B. X-ray methods, C. Electrical properties, C. Ferroelectric properties",

author = "Kim, {Jin Won} and Raghavan, {Chinnambedu Murugesan} and Kim, {Sang Su}",

year = "2015",

month = jan,

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doi = "10.1016/j.ceramint.2014.09.092",

language = "English",

volume = "41",

pages = "1567--1571",

journal = "Ceramics International",

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publisher = "Elsevier",

number = "1, Part B",

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TY - JOUR

T1 - Structural, electrical and ferroelectric properties of acceptor-doped Na0.5Bi4.5Ti4O15 thin films prepared by a chemical solution deposition method

AU - Kim, Jin Won

AU - Raghavan, Chinnambedu Murugesan

AU - Kim, Sang Su

PY - 2015/1/1

Y1 - 2015/1/1

N2 - The effects of acceptor ion doping on the structural, electrical and ferroelectric properties of a Na0.5Bi4.5Ti4O15 thin film were investigated. Pure Na0.5Bi4.5Ti4O15 (NaBTi) and acceptor-doped Na0.5Bi4.5Ti3.97M0.03O15-δ (M = Cr2+ and Fe2+ (NaBTCr and NaBTFe)) thin films were prepared by using chemical solution deposition. X-ray diffraction and Raman spectroscopy studies revealed the formation of orthorhombic structures for all the thin films without any detectable secondary phases. The NaBTCr and NaBTFe thin films exhibited improved electrical and ferroelectric properties compared to the NaBTi thin film, which could be explained by micro-structural changes and the formation of a defect complex that minimizes the interactions between the chemical defects and domain walls.

AB - The effects of acceptor ion doping on the structural, electrical and ferroelectric properties of a Na0.5Bi4.5Ti4O15 thin film were investigated. Pure Na0.5Bi4.5Ti4O15 (NaBTi) and acceptor-doped Na0.5Bi4.5Ti3.97M0.03O15-δ (M = Cr2+ and Fe2+ (NaBTCr and NaBTFe)) thin films were prepared by using chemical solution deposition. X-ray diffraction and Raman spectroscopy studies revealed the formation of orthorhombic structures for all the thin films without any detectable secondary phases. The NaBTCr and NaBTFe thin films exhibited improved electrical and ferroelectric properties compared to the NaBTi thin film, which could be explained by micro-structural changes and the formation of a defect complex that minimizes the interactions between the chemical defects and domain walls.

KW - A. Films

KW - B. X-ray methods

KW - C. Electrical properties

KW - C. Ferroelectric properties

UR - http://www.scopus.com/inward/record.url?scp=84923021297&partnerID=8YFLogxK

UR - https://www.sciencedirect.com/science/article/pii/S0272884214014771?via%3Dihub

U2 - 10.1016/j.ceramint.2014.09.092

DO - 10.1016/j.ceramint.2014.09.092

M3 - Article

AN - SCOPUS:84923021297

SN - 0272-8842

VL - 41

SP - 1567

EP - 1571

JO - Ceramics International

JF - Ceramics International

IS - 1, Part B

ER -

Structural, electrical and ferroelectric properties of acceptor-doped Na_0.5Bi_4.5Ti₄O₁₅ thin films prepared by a chemical solution deposition method

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Keywords

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