Structural, electrical, and multiferroic properties of Aurivillius (Bi7−xLa x)Fe3Ti3O21 thin films

C. M. Raghavan, J. W. Kim, J. Y. Choi, S. S. Kim*, J. W. Kim

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of La3+- ion doping on the structural, electrical, and multiferroic properties of the six-layered Aurivillius-phase Bi7Fe3Ti3O21 thin film were investigated. A chemical solution deposition method was used to deposit the (Bi7−xLax)Fe3Ti3O21 (x = 0 and 0.6) thin films on Pt(111)/Ti/SiO2/Si(100) substrates. The formation of Aurivillius orthorhombic structures was confirmed by using X-ray diffraction and Raman spectroscopy studies. The (Bi6.4La0.6)Fe3Ti3O21 thin film exhibited a low leakage current density (1.84 × 10−6 A/cm2 at an applied electric field of 100 kV/cm) and a large remnant polarization (20.20 μC/cm2 at an applied electric field of 318 kV/cm) as compared to the Bi7Fe3Ti3O21 thin film. The enhanced electrical and multiferroic properties are ascribed to a reduced oxygen concentration and a structural distortion. Both thin films were weakly ferromagnetic at room temperature.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalJournal of the Korean Physical Society
Volume68
Issue number1
DOIs
Publication statusPublished - 1 Jan 2016

Keywords

  • Chemical solution deposition
  • Electrical properties
  • La-doped BiFeTiO thin film
  • Multiferroic properties

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