Structural, electrical, and multiferroic properties of Aurivillius (Bi7−xLa x)Fe3Ti3O21 thin films

C. M. Raghavan; J. W. Kim; J. Y. Choi; S. S. Kim; J. W. Kim

doi:10.3938/jkps.68.1

Structural, electrical, and multiferroic properties of Aurivillius (Bi_7−xLa_x)Fe₃Ti₃O₂₁ thin films

C. M. Raghavan, J. W. Kim, J. Y. Choi, S. S. Kim^*, J. W. Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of La³⁺- ion doping on the structural, electrical, and multiferroic properties of the six-layered Aurivillius-phase Bi₇Fe₃Ti₃O₂₁ thin film were investigated. A chemical solution deposition method was used to deposit the (Bi_7−xLa_x)Fe₃Ti₃O₂₁ (x = 0 and 0.6) thin films on Pt(111)/Ti/SiO₂/Si(100) substrates. The formation of Aurivillius orthorhombic structures was confirmed by using X-ray diffraction and Raman spectroscopy studies. The (Bi_6.4La_0.6)Fe₃Ti₃O₂₁ thin film exhibited a low leakage current density (1.84 × 10⁻⁶ A/cm² at an applied electric field of 100 kV/cm) and a large remnant polarization (20.20 μC/cm² at an applied electric field of 318 kV/cm) as compared to the Bi₇Fe₃Ti₃O₂₁ thin film. The enhanced electrical and multiferroic properties are ascribed to a reduced oxygen concentration and a structural distortion. Both thin films were weakly ferromagnetic at room temperature.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	68
Issue number	1
DOIs	https://doi.org/10.3938/jkps.68.1
Publication status	Published - 1 Jan 2016

Keywords

Chemical solution deposition
Electrical properties
La-doped BiFeTiO thin film
Multiferroic properties

Access to Document

10.3938/jkps.68.1

Cite this

@article{95609bdb24cb4ded9fd0fc9fe865fa9f,

title = "Structural, electrical, and multiferroic properties of Aurivillius (Bi7−xLa x)Fe3Ti3O21 thin films",

abstract = "The effects of La3+- ion doping on the structural, electrical, and multiferroic properties of the six-layered Aurivillius-phase Bi7Fe3Ti3O21 thin film were investigated. A chemical solution deposition method was used to deposit the (Bi7−xLax)Fe3Ti3O21 (x = 0 and 0.6) thin films on Pt(111)/Ti/SiO2/Si(100) substrates. The formation of Aurivillius orthorhombic structures was confirmed by using X-ray diffraction and Raman spectroscopy studies. The (Bi6.4La0.6)Fe3Ti3O21 thin film exhibited a low leakage current density (1.84 × 10−6 A/cm2 at an applied electric field of 100 kV/cm) and a large remnant polarization (20.20 μC/cm2 at an applied electric field of 318 kV/cm) as compared to the Bi7Fe3Ti3O21 thin film. The enhanced electrical and multiferroic properties are ascribed to a reduced oxygen concentration and a structural distortion. Both thin films were weakly ferromagnetic at room temperature.",

keywords = "Chemical solution deposition, Electrical properties, La-doped BiFeTiO thin film, Multiferroic properties",

author = "Raghavan, {C. M.} and Kim, {J. W.} and Choi, {J. Y.} and Kim, {S. S.} and Kim, {J. W.}",

year = "2016",

month = jan,

day = "1",

doi = "10.3938/jkps.68.1",

language = "English",

volume = "68",

pages = "1--6",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "1",

}

TY - JOUR

T1 - Structural, electrical, and multiferroic properties of Aurivillius (Bi7−xLa x)Fe3Ti3O21 thin films

AU - Raghavan, C. M.

AU - Kim, J. W.

AU - Choi, J. Y.

AU - Kim, S. S.

AU - Kim, J. W.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - The effects of La3+- ion doping on the structural, electrical, and multiferroic properties of the six-layered Aurivillius-phase Bi7Fe3Ti3O21 thin film were investigated. A chemical solution deposition method was used to deposit the (Bi7−xLax)Fe3Ti3O21 (x = 0 and 0.6) thin films on Pt(111)/Ti/SiO2/Si(100) substrates. The formation of Aurivillius orthorhombic structures was confirmed by using X-ray diffraction and Raman spectroscopy studies. The (Bi6.4La0.6)Fe3Ti3O21 thin film exhibited a low leakage current density (1.84 × 10−6 A/cm2 at an applied electric field of 100 kV/cm) and a large remnant polarization (20.20 μC/cm2 at an applied electric field of 318 kV/cm) as compared to the Bi7Fe3Ti3O21 thin film. The enhanced electrical and multiferroic properties are ascribed to a reduced oxygen concentration and a structural distortion. Both thin films were weakly ferromagnetic at room temperature.

AB - The effects of La3+- ion doping on the structural, electrical, and multiferroic properties of the six-layered Aurivillius-phase Bi7Fe3Ti3O21 thin film were investigated. A chemical solution deposition method was used to deposit the (Bi7−xLax)Fe3Ti3O21 (x = 0 and 0.6) thin films on Pt(111)/Ti/SiO2/Si(100) substrates. The formation of Aurivillius orthorhombic structures was confirmed by using X-ray diffraction and Raman spectroscopy studies. The (Bi6.4La0.6)Fe3Ti3O21 thin film exhibited a low leakage current density (1.84 × 10−6 A/cm2 at an applied electric field of 100 kV/cm) and a large remnant polarization (20.20 μC/cm2 at an applied electric field of 318 kV/cm) as compared to the Bi7Fe3Ti3O21 thin film. The enhanced electrical and multiferroic properties are ascribed to a reduced oxygen concentration and a structural distortion. Both thin films were weakly ferromagnetic at room temperature.

KW - Chemical solution deposition

KW - Electrical properties

KW - La-doped BiFeTiO thin film

KW - Multiferroic properties

UR - http://www.scopus.com/inward/record.url?scp=84958743386&partnerID=8YFLogxK

UR - https://link.springer.com/article/10.3938%2Fjkps.68.1

U2 - 10.3938/jkps.68.1

DO - 10.3938/jkps.68.1

M3 - Article

AN - SCOPUS:84958743386

SN - 0374-4884

VL - 68

SP - 1

EP - 6

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

Structural, electrical, and multiferroic properties of Aurivillius (Bi_7−xLa_x)Fe₃Ti₃O₂₁ thin films

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this