TY - JOUR
T1 - Structural, electrical, and multiferroic properties of Aurivillius Bi
6
Fe
2
(Ti
3-x
V
x
)O
18+δ
thin films prepared by chemical solution deposition
AU - Raghavan, C. M.
AU - Kim, J. W.
AU - Kim, S. S.
AU - Kim, J. W.
AU - Song, T. K.
PY - 2016/6/1
Y1 - 2016/6/1
N2 -
Aurivillius type five-layered V-doped Bi
6
Fe
2
(Ti
3-x
V
x
)O
18+δ
(x = 0.00, 0.03, 0.06, and 0.09) thin films were prepared on Pt(111)/Ti/SiO
2
/Si(100) substrates by using a chemical solution deposition method. All the thin films were crystallized in Aurivillius structures, which have been confirmed by using X-ray diffraction and Raman spectroscopy studies. On comparing the thin films, the Bi
6
Fe
2
(Ti
2.94
V
0.06
)O
18+δ
thin film showed the most enhanced electrical and multiferroic properties, with a leakage current density value about four orders of magnitude lower than that of the Bi
6
Fe
2
Ti
3
O
18
thin film, for example. All of these thin films showed anti-ferromagnetic hysteresis loops at room temperature. The significant decrease in the concentration of oxygen vacancies and the formation of a stable structure caused by doping with the donor V
5+
-ion are related to the improved properties in the V-doped Bi
6
Fe
2
(Ti
3-x
V
x
)O
18+δ
thin films.
AB -
Aurivillius type five-layered V-doped Bi
6
Fe
2
(Ti
3-x
V
x
)O
18+δ
(x = 0.00, 0.03, 0.06, and 0.09) thin films were prepared on Pt(111)/Ti/SiO
2
/Si(100) substrates by using a chemical solution deposition method. All the thin films were crystallized in Aurivillius structures, which have been confirmed by using X-ray diffraction and Raman spectroscopy studies. On comparing the thin films, the Bi
6
Fe
2
(Ti
2.94
V
0.06
)O
18+δ
thin film showed the most enhanced electrical and multiferroic properties, with a leakage current density value about four orders of magnitude lower than that of the Bi
6
Fe
2
Ti
3
O
18
thin film, for example. All of these thin films showed anti-ferromagnetic hysteresis loops at room temperature. The significant decrease in the concentration of oxygen vacancies and the formation of a stable structure caused by doping with the donor V
5+
-ion are related to the improved properties in the V-doped Bi
6
Fe
2
(Ti
3-x
V
x
)O
18+δ
thin films.
KW - Electrical properties
KW - Multiferroic properties
KW - Sol–gel processes
KW - V-doped Bi Fe Ti O thin films
UR - http://www.scopus.com/inward/record.url?scp=84962201528&partnerID=8YFLogxK
UR - https://link.springer.com/article/10.1007%2Fs10832-016-0031-4
U2 - 10.1007/s10832-016-0031-4
DO - 10.1007/s10832-016-0031-4
M3 - Article
AN - SCOPUS:84962201528
SN - 1385-3449
VL - 36
SP - 76
EP - 81
JO - Journal of Electroceramics
JF - Journal of Electroceramics
IS - 1-4
ER -