Aurivillius type five-layered V-doped Bi 6 Fe 2 (Ti 3-x V x )O 18+δ (x = 0.00, 0.03, 0.06, and 0.09) thin films were prepared on Pt(111)/Ti/SiO 2 /Si(100) substrates by using a chemical solution deposition method. All the thin films were crystallized in Aurivillius structures, which have been confirmed by using X-ray diffraction and Raman spectroscopy studies. On comparing the thin films, the Bi 6 Fe 2 (Ti 2.94 V 0.06 )O 18+δ thin film showed the most enhanced electrical and multiferroic properties, with a leakage current density value about four orders of magnitude lower than that of the Bi 6 Fe 2 Ti 3 O 18 thin film, for example. All of these thin films showed anti-ferromagnetic hysteresis loops at room temperature. The significant decrease in the concentration of oxygen vacancies and the formation of a stable structure caused by doping with the donor V 5+ -ion are related to the improved properties in the V-doped Bi 6 Fe 2 (Ti 3-x V x )O 18+δ thin films.
- Electrical properties
- Multiferroic properties
- Sol–gel processes
- V-doped Bi Fe Ti O thin films