Structural, electrical, and multiferroic properties of Aurivillius Bi
                        6
                        Fe
                        2
                        (Ti
                        3-x
                        V
                        x
                        )O
                        18+δ
                         thin films prepared by chemical solution deposition

C. M. Raghavan; J. W. Kim; S. S. Kim; J. W. Kim; T. K. Song

doi:10.1007/s10832-016-0031-4

Structural, electrical, and multiferroic properties of Aurivillius Bi ₆ Fe ₂ (Ti _3-x V _x )O _18+δ thin films prepared by chemical solution deposition

C. M. Raghavan
, J. W. Kim
, S. S. Kim^*
, J. W. Kim
, T. K. Song

^*Corresponding author for this work

Changwon National University

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Aurivillius type five-layered V-doped Bi ₆ Fe ₂ (Ti _3-x V _x )O _18+δ (x = 0.00, 0.03, 0.06, and 0.09) thin films were prepared on Pt(111)/Ti/SiO ₂ /Si(100) substrates by using a chemical solution deposition method. All the thin films were crystallized in Aurivillius structures, which have been confirmed by using X-ray diffraction and Raman spectroscopy studies. On comparing the thin films, the Bi ₆ Fe ₂ (Ti _2.94 V _0.06 )O _18+δ thin film showed the most enhanced electrical and multiferroic properties, with a leakage current density value about four orders of magnitude lower than that of the Bi ₆ Fe ₂ Ti ₃ O ₁₈ thin film, for example. All of these thin films showed anti-ferromagnetic hysteresis loops at room temperature. The significant decrease in the concentration of oxygen vacancies and the formation of a stable structure caused by doping with the donor V ⁵⁺ -ion are related to the improved properties in the V-doped Bi ₆ Fe ₂ (Ti _3-x V _x )O _18+δ thin films.

Original language	English
Pages (from-to)	76-81
Number of pages	6
Journal	Journal of Electroceramics
Volume	36
Issue number	1-4
DOIs	https://doi.org/10.1007/s10832-016-0031-4
Publication status	Published - 1 Jun 2016

Keywords

Electrical properties
Multiferroic properties
Sol–gel processes
V-doped Bi Fe Ti O thin films

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10.1007/s10832-016-0031-4

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Raghavan, C. M., Kim, J. W., Kim, S. S., Kim, J. W., & Song, T. K. (2016). Structural, electrical, and multiferroic properties of Aurivillius Bi ₆ Fe ₂ (Ti _3-x V _x )O _18+δ thin films prepared by chemical solution deposition. Journal of Electroceramics, 36(1-4), 76-81. https://doi.org/10.1007/s10832-016-0031-4

Raghavan, C. M. ; Kim, J. W. ; Kim, S. S. et al. / Structural, electrical, and multiferroic properties of Aurivillius Bi ₆ Fe ₂ (Ti _3-x V _x )O _18+δ thin films prepared by chemical solution deposition. In: Journal of Electroceramics. 2016 ; Vol. 36, No. 1-4. pp. 76-81.

@article{dad6bd9b7e934349b59bdc69f1548c3e,

title = "Structural, electrical, and multiferroic properties of Aurivillius Bi 6 Fe 2 (Ti 3-x V x )O 18+δ thin films prepared by chemical solution deposition",

abstract = " Aurivillius type five-layered V-doped Bi 6 Fe 2 (Ti 3-x V x )O 18+δ (x = 0.00, 0.03, 0.06, and 0.09) thin films were prepared on Pt(111)/Ti/SiO 2 /Si(100) substrates by using a chemical solution deposition method. All the thin films were crystallized in Aurivillius structures, which have been confirmed by using X-ray diffraction and Raman spectroscopy studies. On comparing the thin films, the Bi 6 Fe 2 (Ti 2.94 V 0.06 )O 18+δ thin film showed the most enhanced electrical and multiferroic properties, with a leakage current density value about four orders of magnitude lower than that of the Bi 6 Fe 2 Ti 3 O 18 thin film, for example. All of these thin films showed anti-ferromagnetic hysteresis loops at room temperature. The significant decrease in the concentration of oxygen vacancies and the formation of a stable structure caused by doping with the donor V 5+ -ion are related to the improved properties in the V-doped Bi 6 Fe 2 (Ti 3-x V x )O 18+δ thin films. ",

keywords = "Electrical properties, Multiferroic properties, Sol–gel processes, V-doped Bi Fe Ti O thin films",

author = "Raghavan, \{C. M.\} and Kim, \{J. W.\} and Kim, \{S. S.\} and Kim, \{J. W.\} and Song, \{T. K.\}",

year = "2016",

month = jun,

day = "1",

doi = "10.1007/s10832-016-0031-4",

language = "English",

volume = "36",

pages = "76--81",

journal = "Journal of Electroceramics",

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Raghavan, CM, Kim, JW, Kim, SS, Kim, JW & Song, TK 2016, 'Structural, electrical, and multiferroic properties of Aurivillius Bi ₆ Fe ₂ (Ti _3-x V _x )O _18+δ thin films prepared by chemical solution deposition', Journal of Electroceramics, vol. 36, no. 1-4, pp. 76-81. https://doi.org/10.1007/s10832-016-0031-4

Structural, electrical, and multiferroic properties of Aurivillius Bi ₆ Fe ₂ (Ti _3-x V _x )O _18+δ thin films prepared by chemical solution deposition. / Raghavan, C. M.; Kim, J. W.; Kim, S. S. et al.
In: Journal of Electroceramics, Vol. 36, No. 1-4, 01.06.2016, p. 76-81.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Structural, electrical, and multiferroic properties of Aurivillius Bi 6 Fe 2 (Ti 3-x V x )O 18+δ thin films prepared by chemical solution deposition

AU - Raghavan, C. M.

AU - Kim, J. W.

AU - Kim, S. S.

AU - Kim, J. W.

AU - Song, T. K.

PY - 2016/6/1

Y1 - 2016/6/1

N2 - Aurivillius type five-layered V-doped Bi 6 Fe 2 (Ti 3-x V x )O 18+δ (x = 0.00, 0.03, 0.06, and 0.09) thin films were prepared on Pt(111)/Ti/SiO 2 /Si(100) substrates by using a chemical solution deposition method. All the thin films were crystallized in Aurivillius structures, which have been confirmed by using X-ray diffraction and Raman spectroscopy studies. On comparing the thin films, the Bi 6 Fe 2 (Ti 2.94 V 0.06 )O 18+δ thin film showed the most enhanced electrical and multiferroic properties, with a leakage current density value about four orders of magnitude lower than that of the Bi 6 Fe 2 Ti 3 O 18 thin film, for example. All of these thin films showed anti-ferromagnetic hysteresis loops at room temperature. The significant decrease in the concentration of oxygen vacancies and the formation of a stable structure caused by doping with the donor V 5+ -ion are related to the improved properties in the V-doped Bi 6 Fe 2 (Ti 3-x V x )O 18+δ thin films.

AB - Aurivillius type five-layered V-doped Bi 6 Fe 2 (Ti 3-x V x )O 18+δ (x = 0.00, 0.03, 0.06, and 0.09) thin films were prepared on Pt(111)/Ti/SiO 2 /Si(100) substrates by using a chemical solution deposition method. All the thin films were crystallized in Aurivillius structures, which have been confirmed by using X-ray diffraction and Raman spectroscopy studies. On comparing the thin films, the Bi 6 Fe 2 (Ti 2.94 V 0.06 )O 18+δ thin film showed the most enhanced electrical and multiferroic properties, with a leakage current density value about four orders of magnitude lower than that of the Bi 6 Fe 2 Ti 3 O 18 thin film, for example. All of these thin films showed anti-ferromagnetic hysteresis loops at room temperature. The significant decrease in the concentration of oxygen vacancies and the formation of a stable structure caused by doping with the donor V 5+ -ion are related to the improved properties in the V-doped Bi 6 Fe 2 (Ti 3-x V x )O 18+δ thin films.

KW - Electrical properties

KW - Multiferroic properties

KW - Sol–gel processes

KW - V-doped Bi Fe Ti O thin films

UR - https://www.scopus.com/pages/publications/84962201528

UR - https://link.springer.com/article/10.1007%2Fs10832-016-0031-4

U2 - 10.1007/s10832-016-0031-4

DO - 10.1007/s10832-016-0031-4

M3 - Article

AN - SCOPUS:84962201528

SN - 1385-3449

VL - 36

SP - 76

EP - 81

JO - Journal of Electroceramics

JF - Journal of Electroceramics

IS - 1-4

ER -

Raghavan CM, Kim JW, Kim SS, Kim JW, Song TK. Structural, electrical, and multiferroic properties of Aurivillius Bi ₆ Fe ₂ (Ti _3-x V _x )O _18+δ thin films prepared by chemical solution deposition. Journal of Electroceramics. 2016 Jun 1;36(1-4):76-81. doi: 10.1007/s10832-016-0031-4

Structural, electrical, and multiferroic properties of Aurivillius Bi ₆ Fe ₂ (Ti _3-x V _x )O _18+δ thin films prepared by chemical solution deposition

Abstract

Keywords

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