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Structural, electrical, and multiferroic properties of Aurivillius (Bi7−xLa x)Fe3Ti3O21 thin films

  • C. M. Raghavan
  • , J. W. Kim
  • , J. Y. Choi
  • , S. S. Kim*
  • , J. W. Kim
  • *Corresponding author for this work
  • Changwon National University

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of La3+- ion doping on the structural, electrical, and multiferroic properties of the six-layered Aurivillius-phase Bi7Fe3Ti3O21 thin film were investigated. A chemical solution deposition method was used to deposit the (Bi7−xLax)Fe3Ti3O21 (x = 0 and 0.6) thin films on Pt(111)/Ti/SiO2/Si(100) substrates. The formation of Aurivillius orthorhombic structures was confirmed by using X-ray diffraction and Raman spectroscopy studies. The (Bi6.4La0.6)Fe3Ti3O21 thin film exhibited a low leakage current density (1.84 × 10−6 A/cm2 at an applied electric field of 100 kV/cm) and a large remnant polarization (20.20 μC/cm2 at an applied electric field of 318 kV/cm) as compared to the Bi7Fe3Ti3O21 thin film. The enhanced electrical and multiferroic properties are ascribed to a reduced oxygen concentration and a structural distortion. Both thin films were weakly ferromagnetic at room temperature.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalJournal of the Korean Physical Society
Volume68
Issue number1
DOIs
Publication statusPublished - 1 Jan 2016

Funding

This work was supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0029634).

Keywords

  • Chemical solution deposition
  • Electrical properties
  • La-doped BiFeTiO thin film
  • Multiferroic properties

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