Structural, electrical and multiferroic properties of La-doped mullite Bi2Fe4O9 thin films

C. M. Raghavan; J. W. Kim; J. W. Kim; S. S. Kim

doi:10.1016/j.materresbull.2015.04.054

Structural, electrical and multiferroic properties of La-doped mullite Bi₂Fe₄O₉ thin films

C. M. Raghavan, J. W. Kim, J. W. Kim, S. S. Kim^*

^*Corresponding author for this work

Changwon National University

Research output: Contribution to journal › Article › peer-review

28 Citations (SciVal)

Abstract

Abstract Thin films of (Bi_2-xLa_x)Fe₄O₉ (x = 0 and x = 0.05) were prepared on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by using a chemical solution deposition method to investigate structural, microstructural, electrical and multiferroic properties. Both the thin films were crystallized in mullite type phases with orthorhombic structures containing no secondary and impurity phases, which was confirmed by X-ray diffraction and Raman spectroscopy studies. The (Bi_1.95La_0.05)Fe₄O₉ thin film exhibited improved electrical and multiferroic properties at room-temperature. The leakage current density of the (Bi_1.95La_0.05)Fe₄O₉ thin film was one order of magnitude lower than that of the Bi₂Fe₄O₉ thin film. Furthermore, in the thin film form, (Bi_2-xLa_x)Fe₄O₉ exhibited better stability against electrical breakdowns and enhanced multiferroic properties.

Original language	English
Pages (from-to)	279-283
Number of pages	5
Journal	Materials Research Bulletin
Volume	70
DOIs	https://doi.org/10.1016/j.materresbull.2015.04.054
Publication status	Published - 1 Oct 2015

Funding

This work was supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2010-0029634 ).

Keywords

A. Thin films
B. Magnetic properties
B. Sol-gel chemistry
D. Electrical properties
D. Ferroelectricity

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10.1016/j.materresbull.2015.04.054

Cite this

@article{d816a92880fe4a68a4114d6ac6ab75a6,

title = "Structural, electrical and multiferroic properties of La-doped mullite Bi2Fe4O9 thin films",

abstract = "Abstract Thin films of (Bi2-xLax)Fe4O9 (x = 0 and x = 0.05) were prepared on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by using a chemical solution deposition method to investigate structural, microstructural, electrical and multiferroic properties. Both the thin films were crystallized in mullite type phases with orthorhombic structures containing no secondary and impurity phases, which was confirmed by X-ray diffraction and Raman spectroscopy studies. The (Bi1.95La0.05)Fe4O9 thin film exhibited improved electrical and multiferroic properties at room-temperature. The leakage current density of the (Bi1.95La0.05)Fe4O9 thin film was one order of magnitude lower than that of the Bi2Fe4O9 thin film. Furthermore, in the thin film form, (Bi2-xLax)Fe4O9 exhibited better stability against electrical breakdowns and enhanced multiferroic properties.",

keywords = "A. Thin films, B. Magnetic properties, B. Sol-gel chemistry, D. Electrical properties, D. Ferroelectricity",

author = "Raghavan, {C. M.} and Kim, {J. W.} and Kim, {J. W.} and Kim, {S. S.}",

year = "2015",

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doi = "10.1016/j.materresbull.2015.04.054",

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journal = "Materials Research Bulletin",

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T1 - Structural, electrical and multiferroic properties of La-doped mullite Bi2Fe4O9 thin films

AU - Raghavan, C. M.

AU - Kim, J. W.

AU - Kim, S. S.

PY - 2015/10/1

Y1 - 2015/10/1

N2 - Abstract Thin films of (Bi2-xLax)Fe4O9 (x = 0 and x = 0.05) were prepared on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by using a chemical solution deposition method to investigate structural, microstructural, electrical and multiferroic properties. Both the thin films were crystallized in mullite type phases with orthorhombic structures containing no secondary and impurity phases, which was confirmed by X-ray diffraction and Raman spectroscopy studies. The (Bi1.95La0.05)Fe4O9 thin film exhibited improved electrical and multiferroic properties at room-temperature. The leakage current density of the (Bi1.95La0.05)Fe4O9 thin film was one order of magnitude lower than that of the Bi2Fe4O9 thin film. Furthermore, in the thin film form, (Bi2-xLax)Fe4O9 exhibited better stability against electrical breakdowns and enhanced multiferroic properties.

AB - Abstract Thin films of (Bi2-xLax)Fe4O9 (x = 0 and x = 0.05) were prepared on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by using a chemical solution deposition method to investigate structural, microstructural, electrical and multiferroic properties. Both the thin films were crystallized in mullite type phases with orthorhombic structures containing no secondary and impurity phases, which was confirmed by X-ray diffraction and Raman spectroscopy studies. The (Bi1.95La0.05)Fe4O9 thin film exhibited improved electrical and multiferroic properties at room-temperature. The leakage current density of the (Bi1.95La0.05)Fe4O9 thin film was one order of magnitude lower than that of the Bi2Fe4O9 thin film. Furthermore, in the thin film form, (Bi2-xLax)Fe4O9 exhibited better stability against electrical breakdowns and enhanced multiferroic properties.

KW - A. Thin films

KW - B. Magnetic properties

KW - B. Sol-gel chemistry

KW - D. Electrical properties

KW - D. Ferroelectricity

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