Structural, electrical and multiferroic properties of Nb-doped Bi7Fe3Ti3O21 thin films

Chinnambedu Murugesan Raghavan; Jin Won Kim; Sang Su Kim

doi:10.3938/NPSM.65.542

Structural, electrical and multiferroic properties of Nb-doped Bi₇Fe₃Ti₃O₂₁ thin films

Chinnambedu Murugesan Raghavan, Jin Won Kim, Sang Su Kim

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of donor Nb⁵⁺-ion doping on the structural, electrical, and multiferroic properties of an Aurivillius Bi₇Fe₃Ti₃O₂₁ thin film were investigated. Incorporation of Nb⁵⁺-ions into the Ti⁴⁺-sites of the Bi₇Fe₃Ti₃O₂₁ thin film resulted in a substantial improvement of its electrical and multiferroic properties. From the study of the electrical properties, the Bi₇Fe₃Ti_2.94Nb_0.06O_21+δ thin film exhibited a low leakage current density of 5.11×10-6 A/cm²at 100 kV/cm, which was about one order of magnitude lower than that of the untreated Bi₇Fe₃Ti₃O₂₁ thin film. The ferroelectric P -E hysteresis loops of the Bi₇Fe₃Ti_2.94Nb_0.06O_21+δthin film showed a large remnant polarization (2P_r) of 20.6 μC/cm² at 630 kV/cm whereas the 2P_r value measured for the untreated Bi₇Fe₃Ti₃O₂₁ thin film was 3.5 μC/cm²at 318 kV/cm. Furthermore, a well-saturated magnetic hysteresis loop with an enhanced magnetization was observed for the Bi₇Fe₃Ti_2.94Nb_0.06O_{21+ δ}thin film at room temperature.

Original language	English
Pages (from-to)	542-549
Number of pages	8
Journal	New Physics: Sae Mulli
Volume	65
Issue number	6
DOIs	https://doi.org/10.3938/NPSM.65.542
Publication status	Published - 1 Jun 2015

Bibliographical note

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Keywords

Chemical solution deposition
Electrical properties
Multiferroic properties
Nb-doped BiFeTiO thin film

Access to Document

10.3938/NPSM.65.542Licence: CC BY-NC 3.0

Structural, Electrical and Multiferroic Properties
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Final published version, 0.98 MBLicence: CC BY-NC 3.0

Cite this

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title = "Structural, electrical and multiferroic properties of Nb-doped Bi7Fe3Ti3O21 thin films",

abstract = "The effects of donor Nb5+-ion doping on the structural, electrical, and multiferroic properties of an Aurivillius Bi7Fe3Ti3O21 thin film were investigated. Incorporation of Nb5+-ions into the Ti4+-sites of the Bi7Fe3Ti3O21 thin film resulted in a substantial improvement of its electrical and multiferroic properties. From the study of the electrical properties, the Bi7Fe3Ti2.94Nb0.06O21+δ thin film exhibited a low leakage current density of 5.11×10-6 A/cm2at 100 kV/cm, which was about one order of magnitude lower than that of the untreated Bi7Fe3Ti3O21 thin film. The ferroelectric P -E hysteresis loops of the Bi7Fe3Ti2.94Nb0.06O21+δthin film showed a large remnant polarization (2Pr) of 20.6 μC/cm2 at 630 kV/cm whereas the 2Pr value measured for the untreated Bi7Fe3Ti3O21 thin film was 3.5 μC/cm2at 318 kV/cm. Furthermore, a well-saturated magnetic hysteresis loop with an enhanced magnetization was observed for the Bi7Fe3Ti2.94Nb0.06O21+ δthin film at room temperature.",

keywords = "Chemical solution deposition, Electrical properties, Multiferroic properties, Nb-doped BiFeTiO thin film",

author = "Raghavan, {Chinnambedu Murugesan} and Kim, {Jin Won} and Kim, {Sang Su}",

note = "This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.",

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AU - Raghavan, Chinnambedu Murugesan

AU - Kim, Jin Won

AU - Kim, Sang Su

N1 - This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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N2 - The effects of donor Nb5+-ion doping on the structural, electrical, and multiferroic properties of an Aurivillius Bi7Fe3Ti3O21 thin film were investigated. Incorporation of Nb5+-ions into the Ti4+-sites of the Bi7Fe3Ti3O21 thin film resulted in a substantial improvement of its electrical and multiferroic properties. From the study of the electrical properties, the Bi7Fe3Ti2.94Nb0.06O21+δ thin film exhibited a low leakage current density of 5.11×10-6 A/cm2at 100 kV/cm, which was about one order of magnitude lower than that of the untreated Bi7Fe3Ti3O21 thin film. The ferroelectric P -E hysteresis loops of the Bi7Fe3Ti2.94Nb0.06O21+δthin film showed a large remnant polarization (2Pr) of 20.6 μC/cm2 at 630 kV/cm whereas the 2Pr value measured for the untreated Bi7Fe3Ti3O21 thin film was 3.5 μC/cm2at 318 kV/cm. Furthermore, a well-saturated magnetic hysteresis loop with an enhanced magnetization was observed for the Bi7Fe3Ti2.94Nb0.06O21+ δthin film at room temperature.

AB - The effects of donor Nb5+-ion doping on the structural, electrical, and multiferroic properties of an Aurivillius Bi7Fe3Ti3O21 thin film were investigated. Incorporation of Nb5+-ions into the Ti4+-sites of the Bi7Fe3Ti3O21 thin film resulted in a substantial improvement of its electrical and multiferroic properties. From the study of the electrical properties, the Bi7Fe3Ti2.94Nb0.06O21+δ thin film exhibited a low leakage current density of 5.11×10-6 A/cm2at 100 kV/cm, which was about one order of magnitude lower than that of the untreated Bi7Fe3Ti3O21 thin film. The ferroelectric P -E hysteresis loops of the Bi7Fe3Ti2.94Nb0.06O21+δthin film showed a large remnant polarization (2Pr) of 20.6 μC/cm2 at 630 kV/cm whereas the 2Pr value measured for the untreated Bi7Fe3Ti3O21 thin film was 3.5 μC/cm2at 318 kV/cm. Furthermore, a well-saturated magnetic hysteresis loop with an enhanced magnetization was observed for the Bi7Fe3Ti2.94Nb0.06O21+ δthin film at room temperature.

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