The effects of donor Nb5+-ion doping on the structural, electrical, and multiferroic properties of an Aurivillius Bi7Fe3Ti3O21 thin film were investigated. Incorporation of Nb5+-ions into the Ti4+-sites of the Bi7Fe3Ti3O21 thin film resulted in a substantial improvement of its electrical and multiferroic properties. From the study of the electrical properties, the Bi7Fe3Ti2.94Nb0.06O21+δ thin film exhibited a low leakage current density of 5.11×10-6 A/cm2at 100 kV/cm, which was about one order of magnitude lower than that of the untreated Bi7Fe3Ti3O21 thin film. The ferroelectric P -E hysteresis loops of the Bi7Fe3Ti2.94Nb0.06O21+δthin film showed a large remnant polarization (2Pr) of 20.6 μC/cm2 at 630 kV/cm whereas the 2Pr value measured for the untreated Bi7Fe3Ti3O21 thin film was 3.5 μC/cm2at 318 kV/cm. Furthermore, a well-saturated magnetic hysteresis loop with an enhanced magnetization was observed for the Bi7Fe3Ti2.94Nb0.06O21+ δthin film at room temperature.
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- Chemical solution deposition
- Electrical properties
- Multiferroic properties
- Nb-doped BiFeTiO thin film