Structural, electrical and optical properties of a Li-doped ZnO thin film fabricated on a Pt(111)/Ti/SiO2/Si(100) substrate

C. M. Raghavan, J. W. Kim, K. W. Jang, S. S. Kim*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A Li-doped ZnO (Zn1−xLixO1−δ, x = 0.12) thin film was fabricated on a Pt(111)/Ti/SiO2/Si(100) substrate by using a chemical solution deposition method. The formation of a wurtzite hexagonal structure was confirmed by an X-ray diffraction and a Raman spectroscopic analysis. Typical hexagonal microcrystalline grains were observed from the surface morphological studies. Room-temperature ferroelectricity with a remnant polarization (2Pr) of 0.05 μC/cm2 and a coercive field (2Ec) of 170 kV/cm at an applied electric field of 200 kV/cm was observed in the Li-doped ZnO thin film. The measured leakage current density for the thin film was 1.09 × 10 −4 A/cm2 at an applied electric field of 100 kV/cm. A sharp near-band-edge emission was observed in the photoluminescence spectrum at a wavelength of 375 nm for the thin film.

Original languageEnglish
Pages (from-to)1045-1050
Number of pages6
JournalJournal of the Korean Physical Society
Volume66
Issue number7
DOIs
Publication statusPublished - 16 Apr 2015

Keywords

  • Chemical solution deposition
  • Electrical properties
  • Ferroelectric properties
  • Li-doped ZnO thin film

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