Structural, electrical and optical properties of a Li-doped ZnO thin film fabricated on a Pt(111)/Ti/SiO2/Si(100) substrate

C. M. Raghavan; J. W. Kim; K. W. Jang; S. S. Kim

doi:10.3938/jkps.66.1045

Structural, electrical and optical properties of a Li-doped ZnO thin film fabricated on a Pt(111)/Ti/SiO₂/Si(100) substrate

C. M. Raghavan, J. W. Kim, K. W. Jang, S. S. Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A Li-doped ZnO (Zn_1−xLi_xO_1−δ, x = 0.12) thin film was fabricated on a Pt(111)/Ti/SiO₂/Si(100) substrate by using a chemical solution deposition method. The formation of a wurtzite hexagonal structure was confirmed by an X-ray diffraction and a Raman spectroscopic analysis. Typical hexagonal microcrystalline grains were observed from the surface morphological studies. Room-temperature ferroelectricity with a remnant polarization (2P_r) of 0.05 μC/cm² and a coercive field (2E_c) of 170 kV/cm at an applied electric field of 200 kV/cm was observed in the Li-doped ZnO thin film. The measured leakage current density for the thin film was 1.09 × 10 ⁻⁴ A/cm² at an applied electric field of 100 kV/cm. A sharp near-band-edge emission was observed in the photoluminescence spectrum at a wavelength of 375 nm for the thin film.

Original language	English
Pages (from-to)	1045-1050
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	66
Issue number	7
DOIs	https://doi.org/10.3938/jkps.66.1045
Publication status	Published - 16 Apr 2015

Keywords

Chemical solution deposition
Electrical properties
Ferroelectric properties
Li-doped ZnO thin film

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title = "Structural, electrical and optical properties of a Li-doped ZnO thin film fabricated on a Pt(111)/Ti/SiO2/Si(100) substrate",

abstract = "A Li-doped ZnO (Zn1−xLixO1−δ, x = 0.12) thin film was fabricated on a Pt(111)/Ti/SiO2/Si(100) substrate by using a chemical solution deposition method. The formation of a wurtzite hexagonal structure was confirmed by an X-ray diffraction and a Raman spectroscopic analysis. Typical hexagonal microcrystalline grains were observed from the surface morphological studies. Room-temperature ferroelectricity with a remnant polarization (2Pr) of 0.05 μC/cm2 and a coercive field (2Ec) of 170 kV/cm at an applied electric field of 200 kV/cm was observed in the Li-doped ZnO thin film. The measured leakage current density for the thin film was 1.09 × 10 −4 A/cm2 at an applied electric field of 100 kV/cm. A sharp near-band-edge emission was observed in the photoluminescence spectrum at a wavelength of 375 nm for the thin film.",

keywords = "Chemical solution deposition, Electrical properties, Ferroelectric properties, Li-doped ZnO thin film",

author = "Raghavan, {C. M.} and Kim, {J. W.} and Jang, {K. W.} and Kim, {S. S.}",

year = "2015",

month = apr,

day = "16",

doi = "10.3938/jkps.66.1045",

language = "English",

volume = "66",

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TY - JOUR

T1 - Structural, electrical and optical properties of a Li-doped ZnO thin film fabricated on a Pt(111)/Ti/SiO2/Si(100) substrate

AU - Raghavan, C. M.

AU - Kim, J. W.

AU - Jang, K. W.

AU - Kim, S. S.

PY - 2015/4/16

Y1 - 2015/4/16

N2 - A Li-doped ZnO (Zn1−xLixO1−δ, x = 0.12) thin film was fabricated on a Pt(111)/Ti/SiO2/Si(100) substrate by using a chemical solution deposition method. The formation of a wurtzite hexagonal structure was confirmed by an X-ray diffraction and a Raman spectroscopic analysis. Typical hexagonal microcrystalline grains were observed from the surface morphological studies. Room-temperature ferroelectricity with a remnant polarization (2Pr) of 0.05 μC/cm2 and a coercive field (2Ec) of 170 kV/cm at an applied electric field of 200 kV/cm was observed in the Li-doped ZnO thin film. The measured leakage current density for the thin film was 1.09 × 10 −4 A/cm2 at an applied electric field of 100 kV/cm. A sharp near-band-edge emission was observed in the photoluminescence spectrum at a wavelength of 375 nm for the thin film.

AB - A Li-doped ZnO (Zn1−xLixO1−δ, x = 0.12) thin film was fabricated on a Pt(111)/Ti/SiO2/Si(100) substrate by using a chemical solution deposition method. The formation of a wurtzite hexagonal structure was confirmed by an X-ray diffraction and a Raman spectroscopic analysis. Typical hexagonal microcrystalline grains were observed from the surface morphological studies. Room-temperature ferroelectricity with a remnant polarization (2Pr) of 0.05 μC/cm2 and a coercive field (2Ec) of 170 kV/cm at an applied electric field of 200 kV/cm was observed in the Li-doped ZnO thin film. The measured leakage current density for the thin film was 1.09 × 10 −4 A/cm2 at an applied electric field of 100 kV/cm. A sharp near-band-edge emission was observed in the photoluminescence spectrum at a wavelength of 375 nm for the thin film.

KW - Chemical solution deposition

KW - Electrical properties

KW - Ferroelectric properties

KW - Li-doped ZnO thin film

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UR - https://link.springer.com/article/10.3938%2Fjkps.66.1045

U2 - 10.3938/jkps.66.1045

DO - 10.3938/jkps.66.1045

M3 - Article

SN - 0374-4884

VL - 66

SP - 1045

EP - 1050

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 7

ER -

Structural, electrical and optical properties of a Li-doped ZnO thin film fabricated on a Pt(111)/Ti/SiO₂/Si(100) substrate

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