Structure and multiferroic properties of V-doped Bi 6 Fe 2 Ti 3 O 18 thin films prepared by chemical solution deposition

H. J. Kim, J. W. Kim, E. J. Kim, J. Y. Choi, C. M. Raghavan, W. J. Kim, M. H. Kim, T. K. Song, J. W. Kim, S. S. Kim*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Pure Bi 6 Fe 2 Ti 3 O 18 and vanadium (V) doped Bi 6 Fe 2 Ti 3 O 18 (Bi 5.99 Fe 2 Ti 2.7 5V 0.03 O 18 ) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by a chemical solution deposition method. The Bi 5.99 Fe 2 Ti 2.75 V 0.03 O 18 thin film exhibited improved electrical and multiferroic properties, such as leakage current densities, dielectric properties, ferroelectric and ferromagnetic properties. We consider that the improved properties might be related to the reduced concentration of oxygen vacancies and the decreased mobility of oxygen vacancies by V doping.. © 2014

Original languageEnglish
Pages (from-to)68-75
Number of pages8
JournalFerroelectrics
Volume465
Issue number1
Early online date1 May 2014
DOIs
Publication statusPublished - 11 Jun 2014

Keywords

  • bismuth layer-structure
  • chemical solution deposition

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