Abstract
Pure Bi 6 Fe 2 Ti 3 O 18 and vanadium (V) doped Bi 6 Fe 2 Ti 3 O 18 (Bi 5.99 Fe 2 Ti 2.7 5V 0.03 O 18 ) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by a chemical solution deposition method. The Bi 5.99 Fe 2 Ti 2.75 V 0.03 O 18 thin film exhibited improved electrical and multiferroic properties, such as leakage current densities, dielectric properties, ferroelectric and ferromagnetic properties. We consider that the improved properties might be related to the reduced concentration of oxygen vacancies and the decreased mobility of oxygen vacancies by V doping.. © 2014
Original language | English |
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Pages (from-to) | 68-75 |
Number of pages | 8 |
Journal | Ferroelectrics |
Volume | 465 |
Issue number | 1 |
Early online date | 1 May 2014 |
DOIs | |
Publication status | Published - 11 Jun 2014 |
Keywords
- bismuth layer-structure
- chemical solution deposition