Structure and multiferroic properties of V-doped Bi 
                        6
                        Fe 
                        2
                        Ti
                        3
                        O
                        18
                         thin films prepared by chemical solution deposition

H. J. Kim; J. W. Kim; E. J. Kim; J. Y. Choi; C. M. Raghavan; W. J. Kim; M. H. Kim; T. K. Song; J. W. Kim; S. S. Kim

doi:10.1080/00150193.2014.894357

Structure and multiferroic properties of V-doped Bi ₆ Fe ₂ Ti ₃ O ₁₈ thin films prepared by chemical solution deposition

H. J. Kim
, J. W. Kim
, E. J. Kim
, J. Y. Choi
, C. M. Raghavan
, W. J. Kim
, M. H. Kim
, T. K. Song
, J. W. Kim
, S. S. Kim^*

^*Corresponding author for this work

Changwon National University

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Pure Bi ₆ Fe ₂ Ti ₃ O ₁₈ and vanadium (V) doped Bi ₆ Fe ₂ Ti ₃ O ₁₈ (Bi _5.99 Fe ₂ Ti _2.7 5V _0.03 O ₁₈ ) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by a chemical solution deposition method. The Bi _5.99 Fe ₂ Ti _2.75 V _0.03 O ₁₈ thin film exhibited improved electrical and multiferroic properties, such as leakage current densities, dielectric properties, ferroelectric and ferromagnetic properties. We consider that the improved properties might be related to the reduced concentration of oxygen vacancies and the decreased mobility of oxygen vacancies by V doping.. © 2014

Original language	English
Pages (from-to)	68-75
Number of pages	8
Journal	Ferroelectrics
Volume	465
Issue number	1
Early online date	1 May 2014
DOIs	https://doi.org/10.1080/00150193.2014.894357
Publication status	Published - 11 Jun 2014

Funding

This work was supported by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0029634).

Keywords

bismuth layer-structure
chemical solution deposition

Access to Document

10.1080/00150193.2014.894357

Cite this

Kim, H. J., Kim, J. W., Kim, E. J., Choi, J. Y., Raghavan, C. M., Kim, W. J., Kim, M. H., Song, T. K., Kim, J. W., & Kim, S. S. (2014). Structure and multiferroic properties of V-doped Bi ₆ Fe ₂ Ti ₃ O ₁₈ thin films prepared by chemical solution deposition. Ferroelectrics, 465(1), 68-75. https://doi.org/10.1080/00150193.2014.894357

Kim, H. J. ; Kim, J. W. ; Kim, E. J. et al. / Structure and multiferroic properties of V-doped Bi ₆ Fe ₂ Ti ₃ O ₁₈ thin films prepared by chemical solution deposition. In: Ferroelectrics. 2014 ; Vol. 465, No. 1. pp. 68-75.

@article{38399d40c267413da5243043b74c1a9c,

title = "Structure and multiferroic properties of V-doped Bi 6 Fe 2 Ti 3 O 18 thin films prepared by chemical solution deposition",

abstract = " Pure Bi 6 Fe 2 Ti 3 O 18 and vanadium (V) doped Bi 6 Fe 2 Ti 3 O 18 (Bi 5.99 Fe 2 Ti 2.7 5V 0.03 O 18 ) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by a chemical solution deposition method. The Bi 5.99 Fe 2 Ti 2.75 V 0.03 O 18 thin film exhibited improved electrical and multiferroic properties, such as leakage current densities, dielectric properties, ferroelectric and ferromagnetic properties. We consider that the improved properties might be related to the reduced concentration of oxygen vacancies and the decreased mobility of oxygen vacancies by V doping.. {\textcopyright} 2014",

keywords = "bismuth layer-structure, chemical solution deposition",

author = "Kim, \{H. J.\} and Kim, \{J. W.\} and Kim, \{E. J.\} and Choi, \{J. Y.\} and Raghavan, \{C. M.\} and Kim, \{W. J.\} and Kim, \{M. H.\} and Song, \{T. K.\} and Kim, \{J. W.\} and Kim, \{S. S.\}",

year = "2014",

month = jun,

day = "11",

doi = "10.1080/00150193.2014.894357",

language = "English",

volume = "465",

pages = "68--75",

journal = "Ferroelectrics",

issn = "0015-0193",

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Kim, HJ, Kim, JW, Kim, EJ, Choi, JY, Raghavan, CM, Kim, WJ, Kim, MH, Song, TK, Kim, JW & Kim, SS 2014, 'Structure and multiferroic properties of V-doped Bi ₆ Fe ₂ Ti ₃ O ₁₈ thin films prepared by chemical solution deposition', Ferroelectrics, vol. 465, no. 1, pp. 68-75. https://doi.org/10.1080/00150193.2014.894357

Structure and multiferroic properties of V-doped Bi ₆ Fe ₂ Ti ₃ O ₁₈ thin films prepared by chemical solution deposition. / Kim, H. J.; Kim, J. W.; Kim, E. J. et al.
In: Ferroelectrics, Vol. 465, No. 1, 11.06.2014, p. 68-75.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Structure and multiferroic properties of V-doped Bi 6 Fe 2 Ti 3 O 18 thin films prepared by chemical solution deposition

AU - Kim, H. J.

AU - Kim, J. W.

AU - Kim, E. J.

AU - Choi, J. Y.

AU - Raghavan, C. M.

AU - Kim, W. J.

AU - Kim, M. H.

AU - Song, T. K.

AU - Kim, J. W.

AU - Kim, S. S.

PY - 2014/6/11

Y1 - 2014/6/11

N2 - Pure Bi 6 Fe 2 Ti 3 O 18 and vanadium (V) doped Bi 6 Fe 2 Ti 3 O 18 (Bi 5.99 Fe 2 Ti 2.7 5V 0.03 O 18 ) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by a chemical solution deposition method. The Bi 5.99 Fe 2 Ti 2.75 V 0.03 O 18 thin film exhibited improved electrical and multiferroic properties, such as leakage current densities, dielectric properties, ferroelectric and ferromagnetic properties. We consider that the improved properties might be related to the reduced concentration of oxygen vacancies and the decreased mobility of oxygen vacancies by V doping.. © 2014

AB - Pure Bi 6 Fe 2 Ti 3 O 18 and vanadium (V) doped Bi 6 Fe 2 Ti 3 O 18 (Bi 5.99 Fe 2 Ti 2.7 5V 0.03 O 18 ) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by a chemical solution deposition method. The Bi 5.99 Fe 2 Ti 2.75 V 0.03 O 18 thin film exhibited improved electrical and multiferroic properties, such as leakage current densities, dielectric properties, ferroelectric and ferromagnetic properties. We consider that the improved properties might be related to the reduced concentration of oxygen vacancies and the decreased mobility of oxygen vacancies by V doping.. © 2014

KW - bismuth layer-structure

KW - chemical solution deposition

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Kim HJ, Kim JW, Kim EJ, Choi JY, Raghavan CM, Kim WJ et al. Structure and multiferroic properties of V-doped Bi ₆ Fe ₂ Ti ₃ O ₁₈ thin films prepared by chemical solution deposition. Ferroelectrics. 2014 Jun 11;465(1):68-75. Epub 2014 May 1. doi: 10.1080/00150193.2014.894357