Surface roughness reduction and diffraction efficiency optimisation for e-beam written phase masks

X. Liu; S. Thoms; J.S. Aitchison; R.M. De La Rue; John A.R. Williams; Lorna A. Everall; Ian Bennion

doi:10.1016/S0167-9317(98)00045-8

Surface roughness reduction and diffraction efficiency optimisation for e-beam written phase masks

X. Liu
, S. Thoms
, J.S. Aitchison
, R.M. De La Rue
, John A.R. Williams
, Lorna A. Everall
, Ian Bennion

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article

Abstract

We report the control of surface relief grating parameters and roughness for phase masks produced using e-beam lithography (EBL) and reactive ion etching (RIE). The relationships between processing conditions, grating parameters, surface roughness and the diffraction efficiency of the zeroth and the two first order transmitted beams are discussed.

Original language	English
Pages (from-to)	199-202
Number of pages	4
Journal	Microelectronic Engineering
Volume	41-42
DOIs	https://doi.org/10.1016/S0167-9317(98)00045-8
Publication status	Published - Mar 1998
Event	International Conference on Micro- and Nano- Engineering (MNE'97) - Duration: 1 Mar 1998 → 1 Mar 1998

Bibliographical note

surface relief grating parameters and roughness, e-beam lithography, reactive ion etching, diffraction efficiency of the zeroth

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10.1016/S0167-9317(98)00045-8

Cite this

@article{d62db7979fff4b4ab72f4384fb313e69,

title = "Surface roughness reduction and diffraction efficiency optimisation for e-beam written phase masks",

abstract = "We report the control of surface relief grating parameters and roughness for phase masks produced using e-beam lithography (EBL) and reactive ion etching (RIE). The relationships between processing conditions, grating parameters, surface roughness and the diffraction efficiency of the zeroth and the two first order transmitted beams are discussed.",

author = "X. Liu and S. Thoms and J.S. Aitchison and \{De La Rue\}, R.M. and Williams, \{John A.R.\} and Everall, \{Lorna A.\} and Ian Bennion",

note = "surface relief grating parameters and roughness, e-beam lithography, reactive ion etching, diffraction efficiency of the zeroth; International Conference on Micro- and Nano- Engineering (MNE'97) ; Conference date: 01-03-1998 Through 01-03-1998",

year = "1998",

month = mar,

doi = "10.1016/S0167-9317(98)00045-8",

language = "English",

volume = "41-42",

pages = "199--202",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Surface roughness reduction and diffraction efficiency optimisation for e-beam written phase masks

AU - Liu, X.

AU - Thoms, S.

AU - Aitchison, J.S.

AU - De La Rue, R.M.

AU - Williams, John A.R.

AU - Everall, Lorna A.

AU - Bennion, Ian

N1 - surface relief grating parameters and roughness, e-beam lithography, reactive ion etching, diffraction efficiency of the zeroth

PY - 1998/3

Y1 - 1998/3

N2 - We report the control of surface relief grating parameters and roughness for phase masks produced using e-beam lithography (EBL) and reactive ion etching (RIE). The relationships between processing conditions, grating parameters, surface roughness and the diffraction efficiency of the zeroth and the two first order transmitted beams are discussed.

AB - We report the control of surface relief grating parameters and roughness for phase masks produced using e-beam lithography (EBL) and reactive ion etching (RIE). The relationships between processing conditions, grating parameters, surface roughness and the diffraction efficiency of the zeroth and the two first order transmitted beams are discussed.

U2 - 10.1016/S0167-9317(98)00045-8

DO - 10.1016/S0167-9317(98)00045-8

M3 - Article

SN - 0167-9317

VL - 41-42

SP - 199

EP - 202

JO - Microelectronic Engineering

JF - Microelectronic Engineering

T2 - International Conference on Micro- and Nano- Engineering (MNE'97)

Y2 - 1 March 1998 through 1 March 1998

ER -

Surface roughness reduction and diffraction efficiency optimisation for e-beam written phase masks

Abstract

Bibliographical note

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