Temperature-dependent internal quantum efficiency of blue high-brightness light-emitting diodes

Ilya E. Titkov*, Sergey Yu Karpov, Amit Yadav, Vera L. Zerova, Modestas Zulonas, Bastian Galler, Martin Strassburg, Ines Pietzonka, Hans Juergen Lugauer, Edik U. Rafailov

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Internal quantum efficiency (IQE) of a blue high-brightness InGaN/GaN light-emitting diode (LED) was evaluated from the external quantum efficiency measured as a function of current at various temperatures ranged between 13 and 440 K. Processing the data with a novel evaluation procedure based on the ABC-model, we have determined the temperature-dependent IQE of the LED structure and light extraction efficiency of the LED chip. Separate evaluation of these parameters is helpful for further optimization of the heterostructure and chip designs. The data obtained enable making a guess on the temperature dependence of the radiative and Auger recombination coefficients, which may be important for identification of dominant mechanisms responsible for the efficiency droop in III-nitride LEDs. Thermal degradation of the LED performance in terms of the emission efficiency is also considered.

Original languageEnglish
Pages (from-to)911-920
Number of pages10
JournalIEEE Journal of Quantum Electronics
Volume50
Issue number11
Early online date25 Sep 2014
DOIs
Publication statusPublished - Nov 2014

Bibliographical note

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Funding: European Union through the Nanostructured Efficient White LEDs Project within the FP7 Programme under Grant 318388

Keywords

  • auger recombination
  • iII-nitrides
  • internal quantum efficiency
  • light-emitting diodes
  • optical emission spectra
  • temperature dependence

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    Titkov, I. E., Karpov, S. Y., Yadav, A., Zerova, V. L., Zulonas, M., Galler, B., Strassburg, M., Pietzonka, I., Lugauer, H. J., & Rafailov, E. U. (2014). Temperature-dependent internal quantum efficiency of blue high-brightness light-emitting diodes. IEEE Journal of Quantum Electronics, 50(11), 911-920. https://doi.org/10.1109/JQE.2014.2359958