TY - JOUR
T1 - Topographic characterization of AFM-grown SiO2 on Si
AU - Blasco, X.
AU - Hill, D.
AU - Porti, M.
AU - Nafría, M.
AU - Aymerich, X.
PY - 2001/6/1
Y1 - 2001/6/1
N2 - In order to establish whether atomic force microscope (AFM) grown SiO2 is appropriate for use as a gate oxide in nanoelectronics, a characterization of these films needs to be performed. In this paper results on AFM fabrication and topographical characterization of large-area SiO2 patterns are presented. This paper is centred around the SiO2 surface and SiO2-Si interface roughness, due to its importance in relation to the quality of ultrathin dielectrics. Our results show quite similar values to those obtained for thermal oxides and thus we suggest that AFM-grown SiO2 is a suitable candidate for gate oxide applications in nanodevices.
AB - In order to establish whether atomic force microscope (AFM) grown SiO2 is appropriate for use as a gate oxide in nanoelectronics, a characterization of these films needs to be performed. In this paper results on AFM fabrication and topographical characterization of large-area SiO2 patterns are presented. This paper is centred around the SiO2 surface and SiO2-Si interface roughness, due to its importance in relation to the quality of ultrathin dielectrics. Our results show quite similar values to those obtained for thermal oxides and thus we suggest that AFM-grown SiO2 is a suitable candidate for gate oxide applications in nanodevices.
UR - http://www.scopus.com/inward/record.url?scp=0035356217&partnerID=8YFLogxK
UR - https://iopscience.iop.org/article/10.1088/0957-4484/12/2/307/meta
U2 - 10.1088/0957-4484/12/2/307
DO - 10.1088/0957-4484/12/2/307
M3 - Conference article
AN - SCOPUS:0035356217
VL - 12
SP - 110
EP - 112
JO - Nature Nanotechnology
JF - Nature Nanotechnology
SN - 1748-3387
IS - 2
T2 - Trends in Nanotechnology (TNT 2000) Conference
Y2 - 12 October 2000 through 16 October 2000
ER -