Topographic characterization of AFM-grown SiO2 on Si

X. Blasco; D. Hill; M. Porti; M. Nafría; X. Aymerich

doi:10.1088/0957-4484/12/2/307

Topographic characterization of AFM-grown SiO₂ on Si

X. Blasco^*, D. Hill, M. Porti, M. Nafría, X. Aymerich

^*Corresponding author for this work

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Conference article › peer-review

Abstract

In order to establish whether atomic force microscope (AFM) grown SiO₂ is appropriate for use as a gate oxide in nanoelectronics, a characterization of these films needs to be performed. In this paper results on AFM fabrication and topographical characterization of large-area SiO₂ patterns are presented. This paper is centred around the SiO₂ surface and SiO₂-Si interface roughness, due to its importance in relation to the quality of ultrathin dielectrics. Our results show quite similar values to those obtained for thermal oxides and thus we suggest that AFM-grown SiO₂ is a suitable candidate for gate oxide applications in nanodevices.

Original language	English
Pages (from-to)	110-112
Number of pages	3
Journal	Nanotechnology
Volume	12
Issue number	2
DOIs	https://doi.org/10.1088/0957-4484/12/2/307
Publication status	Published - 1 Jun 2001
Event	Trends in Nanotechnology (TNT 2000) Conference - Toledo, Spain Duration: 12 Oct 2000 → 16 Oct 2000

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title = "Topographic characterization of AFM-grown SiO2 on Si",

abstract = "In order to establish whether atomic force microscope (AFM) grown SiO2 is appropriate for use as a gate oxide in nanoelectronics, a characterization of these films needs to be performed. In this paper results on AFM fabrication and topographical characterization of large-area SiO2 patterns are presented. This paper is centred around the SiO2 surface and SiO2-Si interface roughness, due to its importance in relation to the quality of ultrathin dielectrics. Our results show quite similar values to those obtained for thermal oxides and thus we suggest that AFM-grown SiO2 is a suitable candidate for gate oxide applications in nanodevices.",

author = "X. Blasco and D. Hill and M. Porti and M. Nafr{\'i}a and X. Aymerich",

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T1 - Topographic characterization of AFM-grown SiO2 on Si

AU - Blasco, X.

AU - Hill, D.

AU - Porti, M.

AU - Nafría, M.

AU - Aymerich, X.

PY - 2001/6/1

Y1 - 2001/6/1

N2 - In order to establish whether atomic force microscope (AFM) grown SiO2 is appropriate for use as a gate oxide in nanoelectronics, a characterization of these films needs to be performed. In this paper results on AFM fabrication and topographical characterization of large-area SiO2 patterns are presented. This paper is centred around the SiO2 surface and SiO2-Si interface roughness, due to its importance in relation to the quality of ultrathin dielectrics. Our results show quite similar values to those obtained for thermal oxides and thus we suggest that AFM-grown SiO2 is a suitable candidate for gate oxide applications in nanodevices.

AB - In order to establish whether atomic force microscope (AFM) grown SiO2 is appropriate for use as a gate oxide in nanoelectronics, a characterization of these films needs to be performed. In this paper results on AFM fabrication and topographical characterization of large-area SiO2 patterns are presented. This paper is centred around the SiO2 surface and SiO2-Si interface roughness, due to its importance in relation to the quality of ultrathin dielectrics. Our results show quite similar values to those obtained for thermal oxides and thus we suggest that AFM-grown SiO2 is a suitable candidate for gate oxide applications in nanodevices.

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DO - 10.1088/0957-4484/12/2/307

M3 - Conference article

AN - SCOPUS:0035356217

SN - 0957-4484

VL - 12

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JF - Nanotechnology

IS - 2

T2 - Trends in Nanotechnology (TNT 2000) Conference

Y2 - 12 October 2000 through 16 October 2000

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Topographic characterization of AFM-grown SiO₂ on Si

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