Topographic characterization of AFM-grown SiO2 on Si

X. Blasco*, D. Hill, M. Porti, M. Nafría, X. Aymerich

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

In order to establish whether atomic force microscope (AFM) grown SiO2 is appropriate for use as a gate oxide in nanoelectronics, a characterization of these films needs to be performed. In this paper results on AFM fabrication and topographical characterization of large-area SiO2 patterns are presented. This paper is centred around the SiO2 surface and SiO2-Si interface roughness, due to its importance in relation to the quality of ultrathin dielectrics. Our results show quite similar values to those obtained for thermal oxides and thus we suggest that AFM-grown SiO2 is a suitable candidate for gate oxide applications in nanodevices.

Original languageEnglish
Pages (from-to)110-112
Number of pages3
JournalNanotechnology
Volume12
Issue number2
DOIs
Publication statusPublished - 1 Jun 2001
EventTrends in Nanotechnology (TNT 2000) Conference - Toledo, Spain
Duration: 12 Oct 200016 Oct 2000

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    Blasco, X., Hill, D., Porti, M., Nafría, M., & Aymerich, X. (2001). Topographic characterization of AFM-grown SiO2 on Si. Nanotechnology, 12(2), 110-112. https://doi.org/10.1088/0957-4484/12/2/307