Transient surface states during the CBE growth of GaAs

T. Farrell, D. Hill, T. B. Joyce, T. J. Bullough, P. Weightman*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We report the occurrence of a transient surface state during the initial stages of CBE GaAs(0 0 1) growth. The state was detected in real-time reflectance (R) and reflectance anisotropy spectroscopy (RAS) growth monitoring. At low growth rates, less than 1 μm/h, beam equivalent pressure (BEP) of triethylgallium (TEG) < 2.5 × 10-5 mbar there was no change in R and the RAS signal changed from its pre-growth value under arsenic stabilisation at the growth temperature to its "during growth" value upon admission of the TEG, with the familiar monolayer oscillations. At higher TEG BEPs there was a rapid increase in R at all monitoring wavelengths, followed by a monotonic decay to its pre-growth value. This transient increase in R was accompanied by a change in the RAS signal, the magnitude and sign of which varied with wavelength. The initial increase in R is shown to be associated with the development of a metallic-like surface whereas the changes in the RAS signal are consistent with the formation of Ga dimers.

Original languageEnglish
Pages (from-to)1217-1222
Number of pages6
JournalJournal of Crystal Growth
Issue numberPART 2
Publication statusPublished - 1 Jan 1997


  • CBE growth
  • GaAs
  • RAS


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