Transient surface states during the CBE growth of GaAs

T. Farrell, D. Hill, T. B. Joyce, T. J. Bullough, P. Weightman*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

We report the occurrence of a transient surface state during the initial stages of CBE GaAs(0 0 1) growth. The state was detected in real-time reflectance (R) and reflectance anisotropy spectroscopy (RAS) growth monitoring. At low growth rates, less than 1 μm/h, beam equivalent pressure (BEP) of triethylgallium (TEG) < 2.5 × 10-5 mbar there was no change in R and the RAS signal changed from its pre-growth value under arsenic stabilisation at the growth temperature to its "during growth" value upon admission of the TEG, with the familiar monolayer oscillations. At higher TEG BEPs there was a rapid increase in R at all monitoring wavelengths, followed by a monotonic decay to its pre-growth value. This transient increase in R was accompanied by a change in the RAS signal, the magnitude and sign of which varied with wavelength. The initial increase in R is shown to be associated with the development of a metallic-like surface whereas the changes in the RAS signal are consistent with the formation of Ga dimers.

Original languageEnglish
Pages (from-to)1217-1222
Number of pages6
JournalJournal of Crystal Growth
Volume175-176
Issue numberPART 2
DOIs
Publication statusPublished - 1 Jan 1997

Fingerprint

Chemical beam epitaxy
Surface states
Anisotropy
Spectroscopy
reflectance
anisotropy
spectroscopy
Wavelength
Monitoring
Arsenic
Growth temperature
Dimers
Monolayers
Stabilization
gallium arsenide
arsenic
wavelengths
stabilization
dimers
occurrences

Keywords

  • CBE growth
  • GaAs
  • RAS

Cite this

Farrell, T., Hill, D., Joyce, T. B., Bullough, T. J., & Weightman, P. (1997). Transient surface states during the CBE growth of GaAs. Journal of Crystal Growth, 175-176(PART 2), 1217-1222. https://doi.org/10.1016/S0022-0248(96)00962-1
Farrell, T. ; Hill, D. ; Joyce, T. B. ; Bullough, T. J. ; Weightman, P. / Transient surface states during the CBE growth of GaAs. In: Journal of Crystal Growth. 1997 ; Vol. 175-176, No. PART 2. pp. 1217-1222.
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Farrell, T, Hill, D, Joyce, TB, Bullough, TJ & Weightman, P 1997, 'Transient surface states during the CBE growth of GaAs', Journal of Crystal Growth, vol. 175-176, no. PART 2, pp. 1217-1222. https://doi.org/10.1016/S0022-0248(96)00962-1

Transient surface states during the CBE growth of GaAs. / Farrell, T.; Hill, D.; Joyce, T. B.; Bullough, T. J.; Weightman, P.

In: Journal of Crystal Growth, Vol. 175-176, No. PART 2, 01.01.1997, p. 1217-1222.

Research output: Contribution to journalArticle

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N2 - We report the occurrence of a transient surface state during the initial stages of CBE GaAs(0 0 1) growth. The state was detected in real-time reflectance (R) and reflectance anisotropy spectroscopy (RAS) growth monitoring. At low growth rates, less than 1 μm/h, beam equivalent pressure (BEP) of triethylgallium (TEG) < 2.5 × 10-5 mbar there was no change in R and the RAS signal changed from its pre-growth value under arsenic stabilisation at the growth temperature to its "during growth" value upon admission of the TEG, with the familiar monolayer oscillations. At higher TEG BEPs there was a rapid increase in R at all monitoring wavelengths, followed by a monotonic decay to its pre-growth value. This transient increase in R was accompanied by a change in the RAS signal, the magnitude and sign of which varied with wavelength. The initial increase in R is shown to be associated with the development of a metallic-like surface whereas the changes in the RAS signal are consistent with the formation of Ga dimers.

AB - We report the occurrence of a transient surface state during the initial stages of CBE GaAs(0 0 1) growth. The state was detected in real-time reflectance (R) and reflectance anisotropy spectroscopy (RAS) growth monitoring. At low growth rates, less than 1 μm/h, beam equivalent pressure (BEP) of triethylgallium (TEG) < 2.5 × 10-5 mbar there was no change in R and the RAS signal changed from its pre-growth value under arsenic stabilisation at the growth temperature to its "during growth" value upon admission of the TEG, with the familiar monolayer oscillations. At higher TEG BEPs there was a rapid increase in R at all monitoring wavelengths, followed by a monotonic decay to its pre-growth value. This transient increase in R was accompanied by a change in the RAS signal, the magnitude and sign of which varied with wavelength. The initial increase in R is shown to be associated with the development of a metallic-like surface whereas the changes in the RAS signal are consistent with the formation of Ga dimers.

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Farrell T, Hill D, Joyce TB, Bullough TJ, Weightman P. Transient surface states during the CBE growth of GaAs. Journal of Crystal Growth. 1997 Jan 1;175-176(PART 2):1217-1222. https://doi.org/10.1016/S0022-0248(96)00962-1