Ultrashort-pulse lasers passively mode locked by quantum-dot-based saturable absorbers

A. A. Lagatsky, C. G. Leburn, C. T. A. Brown, W. Sibbett, S. A. Zolotovskaya, E. U. Rafailov

Research output: Contribution to journalReview articlepeer-review


Some key recent achievements in the development of novel saturable absorbers that are based on semiconductor quantum-dot (QD) structures for the passive mode locking of near-infrared lasers are outlined. These are group IV–VI semiconductor nanoparticles (quantum dots) in glass matrices and self-assembled semiconductor quantum dots (group III–V) grown on semiconductor mirrors (QD-SESAMs). The performance of solid-state (Yb3+, Nd3+ and Cr4+-based), Yb-doped fibre and monolithically integrated semiconductor lasers has been described within the context of ultrashort-pulse generation using these types of QD-based modulators. Particular attention has been paid to the nonlinear parameters of the QD-based saturable absorbers that determine the quality of the mode locking in such laser systems.
Original languageEnglish
Pages (from-to)1-45
JournalProgress in Quantum Electronics
Issue number1
Publication statusPublished - Jan 2010


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