Abstract
The morphological richness of electrochemical semiconductor etching is not sufficiently counterparted yet by theoretical modeling. This paper investigates a minimal version of the Current-Burst model with Aging of F\"oll and Carstensen and demonstrates for a restricted geometry that the Aging concept is essential for underetching, or cavity generation. If the influence of Aging is neglected, the dynamics reduces to a Random Etching Model similar to the Random Deposition model. This computer {\sl gedanken experiment} demonstrates that the stochastic dynamics with ageing-dependent kinetic reaction probabilities accounts for the different etching morphologies compared to those obtained in surface roughening and related systems.
| Original language | English |
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| Title of host publication | Physics and Control (PHYSCON) 2007 |
| Place of Publication | Potsdam |
| Number of pages | 3 |
| Volume | 2007 |
| Edition | PHYSCON |
| Publication status | Published - 2007 |