Underetching from simple stochastic etching kinetics

Jens Christian Claussen, Jürgen Carstensen

Research output: Chapter in Book/Report/Conference proceedingChapter (peer-reviewed)

Abstract

The morphological richness of electrochemical semiconductor etching is not sufficiently counterparted yet by theoretical modeling. This paper investigates a minimal version of the Current-Burst model with Aging of F\"oll and Carstensen and demonstrates for a restricted geometry that the Aging concept is essential for underetching, or cavity generation. If the influence of Aging is neglected, the dynamics reduces to a Random Etching Model similar to the Random Deposition model. This computer {\sl gedanken experiment} demonstrates that the stochastic dynamics with ageing-dependent kinetic reaction probabilities accounts for the different etching morphologies compared to those obtained in surface roughening and related systems.
Original languageEnglish
Title of host publicationPhysics and Control (PHYSCON) 2007
Place of PublicationPotsdam
Number of pages3
Volume2007
EditionPHYSCON
Publication statusPublished - 2007

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etching
kinetics
bursts
reaction kinetics
cavities
geometry

Cite this

Claussen, J. C., & Carstensen, J. (2007). Underetching from simple stochastic etching kinetics. In Physics and Control (PHYSCON) 2007 (PHYSCON ed., Vol. 2007). [1379] Potsdam.
Claussen, Jens Christian ; Carstensen, Jürgen. / Underetching from simple stochastic etching kinetics. Physics and Control (PHYSCON) 2007. Vol. 2007 PHYSCON. ed. Potsdam, 2007.
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Claussen, JC & Carstensen, J 2007, Underetching from simple stochastic etching kinetics. in Physics and Control (PHYSCON) 2007. PHYSCON edn, vol. 2007, 1379, Potsdam.

Underetching from simple stochastic etching kinetics. / Claussen, Jens Christian; Carstensen, Jürgen.

Physics and Control (PHYSCON) 2007. Vol. 2007 PHYSCON. ed. Potsdam, 2007. 1379.

Research output: Chapter in Book/Report/Conference proceedingChapter (peer-reviewed)

TY - CHAP

T1 - Underetching from simple stochastic etching kinetics

AU - Claussen, Jens Christian

AU - Carstensen, Jürgen

PY - 2007

Y1 - 2007

N2 - The morphological richness of electrochemical semiconductor etching is not sufficiently counterparted yet by theoretical modeling. This paper investigates a minimal version of the Current-Burst model with Aging of F\"oll and Carstensen and demonstrates for a restricted geometry that the Aging concept is essential for underetching, or cavity generation. If the influence of Aging is neglected, the dynamics reduces to a Random Etching Model similar to the Random Deposition model. This computer {\sl gedanken experiment} demonstrates that the stochastic dynamics with ageing-dependent kinetic reaction probabilities accounts for the different etching morphologies compared to those obtained in surface roughening and related systems.

AB - The morphological richness of electrochemical semiconductor etching is not sufficiently counterparted yet by theoretical modeling. This paper investigates a minimal version of the Current-Burst model with Aging of F\"oll and Carstensen and demonstrates for a restricted geometry that the Aging concept is essential for underetching, or cavity generation. If the influence of Aging is neglected, the dynamics reduces to a Random Etching Model similar to the Random Deposition model. This computer {\sl gedanken experiment} demonstrates that the stochastic dynamics with ageing-dependent kinetic reaction probabilities accounts for the different etching morphologies compared to those obtained in surface roughening and related systems.

M3 - Chapter (peer-reviewed)

VL - 2007

BT - Physics and Control (PHYSCON) 2007

CY - Potsdam

ER -

Claussen JC, Carstensen J. Underetching from simple stochastic etching kinetics. In Physics and Control (PHYSCON) 2007. PHYSCON ed. Vol. 2007. Potsdam. 2007. 1379