Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort pulses, forming the basis of very compact and efficient ultrafast laser sources. In this paper we discuss how the unique properties of quantum-dot materials can be exploited in novel and versatile mode-locking regimes in InAs/GaAs quantum-dot edge-emitting lasers, both in monolithic and external cavity configurations. We present the current status of our research on ultrashort pulse generation involving ground (1260nm) and excited-state (1180nm) transitions, as well as the recent progress in external-cavity broadband tunable quantum-dot lasers.
|Journal||Proceedings of SPIE - International Society for Optical Engineering|
|Publication status||Published - 27 Apr 2010|