TY - JOUR
T1 - Wavelength-tunable, GaSb-based, cascaded type-I quantum-well laser emitting over a range of 300 nm
AU - Chichkov, Nikolai B.
AU - Yadav, Amit
AU - Zherebtsov, Evgeny
AU - Wang, Meng
AU - Kipshidze, Gela
AU - Belenky, Gregory
AU - Shterengas, Leon
AU - Rafailov, Edik U.
N1 - © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
PY - 2018/10/1
Y1 - 2018/10/1
N2 - We present a wavelength-tunable, external-cavity GaSb-based quantum-well laser operating near 3.2 μm. The laser setup consists of an intra-cavity grating in Littman-Metcalf configuration and a cascade pumped GaSb-based gain chip with a narrow-ridge waveguide. The narrow-ridge waveguide has a length of 2 mm and width of 7.5 μm. Cascade pumping is realized with three type-I quantum-wells, using one quantum-well per cascade stage. The laser provides continuous-wave output powers up to 8 mW and slope-efficiencies of 13 % at room temperature. Laser operation is demonstrated over a wavelength range of more than 300 nm, using continuous-wave and pulsed operation regimes.
AB - We present a wavelength-tunable, external-cavity GaSb-based quantum-well laser operating near 3.2 μm. The laser setup consists of an intra-cavity grating in Littman-Metcalf configuration and a cascade pumped GaSb-based gain chip with a narrow-ridge waveguide. The narrow-ridge waveguide has a length of 2 mm and width of 7.5 μm. Cascade pumping is realized with three type-I quantum-wells, using one quantum-well per cascade stage. The laser provides continuous-wave output powers up to 8 mW and slope-efficiencies of 13 % at room temperature. Laser operation is demonstrated over a wavelength range of more than 300 nm, using continuous-wave and pulsed operation regimes.
U2 - 10.1109/LPT.2018.2873049
DO - 10.1109/LPT.2018.2873049
M3 - Article
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
ER -