Wetting-Layer-Pumped Continuous-Wave Surface-Emitting Quantum-Dot Laser

Keith G. Wilcox; Hani J. Kbashi; Adrian H. Quarterman; Oliver J. Morris; Vasilis Apostolopoulos; Mohamed Henini; Anne C. Tropper

doi:10.1109/LPT.2011.2171944

Wetting-Layer-Pumped Continuous-Wave Surface-Emitting Quantum-Dot Laser

Keith G. Wilcox
, Hani J. Kbashi
, Adrian H. Quarterman
, Oliver J. Morris
, Vasilis Apostolopoulos
, Mohamed Henini
, Anne C. Tropper

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to their large inhomogeneous gain spectrum and the potential for temperature insensitivity and low threshold. We report a QD VECSEL which is wetting-layer-pumped using a 915-nm diode laser, reducing the quantum defect compared to barrier pumping. A slope efficiency of 56% relative to absorbed pump power was measured from an unprocessed sample with a heat-sink temperature of -30 °C, 1.75 × higher than when barrier pumped using an 830-nm pump diode.

Original language	English
Pages (from-to)	37-39
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	1
Early online date	17 Oct 2011
DOIs	https://doi.org/10.1109/LPT.2011.2171944
Publication status	Published - Jan 2012

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title = "Wetting-Layer-Pumped Continuous-Wave Surface-Emitting Quantum-Dot Laser",

abstract = "Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to their large inhomogeneous gain spectrum and the potential for temperature insensitivity and low threshold. We report a QD VECSEL which is wetting-layer-pumped using a 915-nm diode laser, reducing the quantum defect compared to barrier pumping. A slope efficiency of 56\% relative to absorbed pump power was measured from an unprocessed sample with a heat-sink temperature of -30 °C, 1.75 × higher than when barrier pumped using an 830-nm pump diode.",

author = "Wilcox, \{Keith G.\} and Kbashi, \{Hani J.\} and Quarterman, \{Adrian H.\} and Morris, \{Oliver J.\} and Vasilis Apostolopoulos and Mohamed Henini and Tropper, \{Anne C.\}",

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doi = "10.1109/LPT.2011.2171944",

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AU - Wilcox, Keith G.

AU - Kbashi, Hani J.

AU - Quarterman, Adrian H.

AU - Morris, Oliver J.

AU - Apostolopoulos, Vasilis

AU - Henini, Mohamed

AU - Tropper, Anne C.

PY - 2012/1

Y1 - 2012/1

N2 - Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to their large inhomogeneous gain spectrum and the potential for temperature insensitivity and low threshold. We report a QD VECSEL which is wetting-layer-pumped using a 915-nm diode laser, reducing the quantum defect compared to barrier pumping. A slope efficiency of 56% relative to absorbed pump power was measured from an unprocessed sample with a heat-sink temperature of -30 °C, 1.75 × higher than when barrier pumped using an 830-nm pump diode.

AB - Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to their large inhomogeneous gain spectrum and the potential for temperature insensitivity and low threshold. We report a QD VECSEL which is wetting-layer-pumped using a 915-nm diode laser, reducing the quantum defect compared to barrier pumping. A slope efficiency of 56% relative to absorbed pump power was measured from an unprocessed sample with a heat-sink temperature of -30 °C, 1.75 × higher than when barrier pumped using an 830-nm pump diode.

UR - https://ieeexplore.ieee.org/document/6045318

UR - https://www.scopus.com/pages/publications/83455163180

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DO - 10.1109/LPT.2011.2171944

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VL - 24

SP - 37

EP - 39

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 1

ER -

Wetting-Layer-Pumped Continuous-Wave Surface-Emitting Quantum-Dot Laser

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