XPS and XMCD study of Fe3O4/GaAs interface

Yongxiong Lu; Jill S. Claydon; Ehsan Ahmad; Yongbing Xu; Sarah M. Thompson; Karen Wilson; Gerrit van der Laan

doi:10.1109/TMAG.2005.854834

XPS and XMCD study of Fe₃O₄/GaAs interface

Yongxiong Lu
, Jill S. Claydon
, Ehsan Ahmad
, Yongbing Xu
, Sarah M. Thompson
, Karen Wilson
, Gerrit van der Laan

University of York
Daresbury Laboratory

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe₃O₄ rather than Fe₂O₃. XAS and XMCD measurements indicate the presence of insulating Fe divalent oxide phases (FeO) beneath the surface Fe₃O₄ layer with the sample thickness above 4 nm. This FeO might act as a barrier for the spin injection into the GaAs.

Original language	English
Pages (from-to)	2808-2810
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	41
Issue number	10
Early online date	17 Oct 2005
DOIs	https://doi.org/10.1109/TMAG.2005.854834
Publication status	Published - Oct 2005

Keywords

Half-metallic Fe3O4
post-growth oxidation
spintronics
XMCD

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10.1109/TMAG.2005.854834

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title = "XPS and XMCD study of Fe3O4/GaAs interface",

abstract = "Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe3O4 rather than Fe2O3. XAS and XMCD measurements indicate the presence of insulating Fe divalent oxide phases (FeO) beneath the surface Fe3O4 layer with the sample thickness above 4 nm. This FeO might act as a barrier for the spin injection into the GaAs.",

keywords = "Half-metallic Fe3O4, post-growth oxidation, spintronics, XMCD",

author = "Yongxiong Lu and Claydon, \{Jill S.\} and Ehsan Ahmad and Yongbing Xu and Thompson, \{Sarah M.\} and Karen Wilson and \{van der Laan\}, Gerrit",

year = "2005",

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doi = "10.1109/TMAG.2005.854834",

language = "English",

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T1 - XPS and XMCD study of Fe3O4/GaAs interface

AU - Lu, Yongxiong

AU - Claydon, Jill S.

AU - Ahmad, Ehsan

AU - Xu, Yongbing

AU - Thompson, Sarah M.

AU - Wilson, Karen

AU - van der Laan, Gerrit

PY - 2005/10

Y1 - 2005/10

N2 - Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe3O4 rather than Fe2O3. XAS and XMCD measurements indicate the presence of insulating Fe divalent oxide phases (FeO) beneath the surface Fe3O4 layer with the sample thickness above 4 nm. This FeO might act as a barrier for the spin injection into the GaAs.

AB - Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe3O4 rather than Fe2O3. XAS and XMCD measurements indicate the presence of insulating Fe divalent oxide phases (FeO) beneath the surface Fe3O4 layer with the sample thickness above 4 nm. This FeO might act as a barrier for the spin injection into the GaAs.

KW - Half-metallic Fe3O4

KW - post-growth oxidation

KW - spintronics

KW - XMCD

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DO - 10.1109/TMAG.2005.854834

M3 - Article

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JO - IEEE Transactions on Magnetics

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IS - 10

ER -

XPS and XMCD study of Fe₃O₄/GaAs interface

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Keywords

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