Numerical modelling of multilayer semiconductor devices: an investigation into reverse recovery voltage snap-off in snubber diodes

  • Peter Thomas Hoban

    Student thesis: Master's ThesisMaster of Philosophy

    Abstract

    The classic paper by Somos has shown how abrupt recovery occurred in alloyed semiconductor diodes, but had postulated that the commutation of diffused diodes may differ dramatically. This was confirmed by other workers. Diffused soft recovery diodes are now in general use. My investigations have shown that diodes can change their recovery characteristics and produce snap-off phenomena. Diode snap-off can be dangerous as it may lead to the destruction of the device and thus to circuit failures. Previously soft-recovery diodes were thought to be immune from this effect...
    Date of Award1990
    Original languageEnglish
    Awarding Institution
    • Aston University

    Keywords

    • numerical modelling
    • transient analysis
    • high voltage snubber diodes
    • circuit simulations
    • diode reverse recovery snap-off

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