Assembly of a high-dielectric constant thin TiOX layer directly on H-terminated semiconductor diamond

Jing Zhao; Jiangwei Liu; Liwen Sang; Meiyong Liao; David Coathup; Masataka Imura; Baogui Shi; Changzhi Gu; Yasuo Koide; Haitao Ye

doi:10.1063/1.4939650

Assembly of a high-dielectric constant thin TiO_X layer directly on H-terminated semiconductor diamond

Jing Zhao, Jiangwei Liu, Liwen Sang, Meiyong Liao, David Coathup, Masataka Imura, Baogui Shi, Changzhi Gu, Yasuo Koide, Haitao Ye

Research output: Contribution to journal › Article › peer-review

Abstract

A high-dielectric constant (high-k) TiOx thin layer was fabricated on hydrogen-terminated diamond (H-diamond) surface by low temperature oxidation of a thin titanium layer in ambient air. The metallic titanium layer was deposited by sputter deposition. The dielectric constant of the resultant TiOx was calculated to be around 12. The capacitance density of the metal-oxide-semiconductor (MOS) based on the TiOx/H-diamond was as high as 0.75 µF/cm2 contributed from the high-k value and the very thin thickness of the TiOx layer. The leakage current was lower than 10-13 A at reverse biases and 10-7A at the forward bias of -2 V. The MOS field-effect transistor based on the high-k TiOx/H-diamond was demonstrated. The utilization of the high-k TiOx with a very thin thickness brought forward the features of an ideally low subthreshold swing slope of 65 mV per decade and improved drain current at low gate voltages. The advantages of the utilization high-k dielectric for diamond MOSFETs are anticipated.

Original language	English
Article number	012105
Number of pages	5
Journal	Applied Physics Letters
Volume	108
Issue number	1
DOIs	https://doi.org/10.1063/1.4939650
Publication status	Published - 5 Jan 2016

Bibliographical note

Copyright 201.5 Acoustical Society of America. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the Acoustical Society of America.

The following article appeared in Zhao, J., Liu, J., Sang, L., Liao, M., Coathup, D., Imura, M., ... Ye, H. (2016). Assembly of a high-dielectric constant thin TiOX layer directly on H-terminated semiconductor diamond. Applied Physics Letters, 108(1), [012105]. The following article appeared in http://link.aip.org/link/?APL/108/012105/

Funding: EC FP7 Marie Curie Action (project No 300193 and 295208); EPSRC (EP/K003070/1); Nanotechnology Platform projects sponsored by MEXT in Japan KAKENHI (15H03999), Green Network of Excellence (GRENE), Low-Carbon Research Network (LCnet); and National Natural Science Foundation of China (Grant Nos.1272278，61390503, and 91323304)

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10.1063/1.4939650

Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond
Copyright 201.5 Acoustical Society of America. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the Acoustical Society of America. The following article appeared in Zhao, J., Liu, J., Sang, L., Liao, M., Coathup, D., Imura, M., ... Ye, H. (2016). Assembly of a high-dielectric constant thin TiOX layer directly on H-terminated semiconductor diamond. Applied Physics Letters, 108(1), [012105]. The following article appeared in http://link.aip.org/link/?APL/108/012105/
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http://scitation.aip.org/content/aip/journal/apl/108/1/10.1063/1.4939650

Cite this

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title = "Assembly of a high-dielectric constant thin TiOX layer directly on H-terminated semiconductor diamond",

abstract = "A high-dielectric constant (high-k) TiOx thin layer was fabricated on hydrogen-terminated diamond (H-diamond) surface by low temperature oxidation of a thin titanium layer in ambient air. The metallic titanium layer was deposited by sputter deposition. The dielectric constant of the resultant TiOx was calculated to be around 12. The capacitance density of the metal-oxide-semiconductor (MOS) based on the TiOx/H-diamond was as high as 0.75 µF/cm2 contributed from the high-k value and the very thin thickness of the TiOx layer. The leakage current was lower than 10-13 A at reverse biases and 10-7A at the forward bias of -2 V. The MOS field-effect transistor based on the high-k TiOx/H-diamond was demonstrated. The utilization of the high-k TiOx with a very thin thickness brought forward the features of an ideally low subthreshold swing slope of 65 mV per decade and improved drain current at low gate voltages. The advantages of the utilization high-k dielectric for diamond MOSFETs are anticipated.",

author = "Jing Zhao and Jiangwei Liu and Liwen Sang and Meiyong Liao and David Coathup and Masataka Imura and Baogui Shi and Changzhi Gu and Yasuo Koide and Haitao Ye",

note = "Copyright 201.5 Acoustical Society of America. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the Acoustical Society of America. The following article appeared in Zhao, J., Liu, J., Sang, L., Liao, M., Coathup, D., Imura, M., ... Ye, H. (2016). Assembly of a high-dielectric constant thin TiOX layer directly on H-terminated semiconductor diamond. Applied Physics Letters, 108(1), [012105]. The following article appeared in http://link.aip.org/link/?APL/108/012105/ Funding: EC FP7 Marie Curie Action (project No 300193 and 295208); EPSRC (EP/K003070/1); Nanotechnology Platform projects sponsored by MEXT in Japan KAKENHI (15H03999), Green Network of Excellence (GRENE), Low-Carbon Research Network (LCnet); and National Natural Science Foundation of China (Grant Nos.1272278，61390503, and 91323304)",

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AU - Imura, Masataka

AU - Shi, Baogui

AU - Gu, Changzhi

AU - Koide, Yasuo

AU - Ye, Haitao

N1 - Copyright 201.5 Acoustical Society of America. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the Acoustical Society of America. The following article appeared in Zhao, J., Liu, J., Sang, L., Liao, M., Coathup, D., Imura, M., ... Ye, H. (2016). Assembly of a high-dielectric constant thin TiOX layer directly on H-terminated semiconductor diamond. Applied Physics Letters, 108(1), [012105]. The following article appeared in http://link.aip.org/link/?APL/108/012105/ Funding: EC FP7 Marie Curie Action (project No 300193 and 295208); EPSRC (EP/K003070/1); Nanotechnology Platform projects sponsored by MEXT in Japan KAKENHI (15H03999), Green Network of Excellence (GRENE), Low-Carbon Research Network (LCnet); and National Natural Science Foundation of China (Grant Nos.1272278，61390503, and 91323304)

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N2 - A high-dielectric constant (high-k) TiOx thin layer was fabricated on hydrogen-terminated diamond (H-diamond) surface by low temperature oxidation of a thin titanium layer in ambient air. The metallic titanium layer was deposited by sputter deposition. The dielectric constant of the resultant TiOx was calculated to be around 12. The capacitance density of the metal-oxide-semiconductor (MOS) based on the TiOx/H-diamond was as high as 0.75 µF/cm2 contributed from the high-k value and the very thin thickness of the TiOx layer. The leakage current was lower than 10-13 A at reverse biases and 10-7A at the forward bias of -2 V. The MOS field-effect transistor based on the high-k TiOx/H-diamond was demonstrated. The utilization of the high-k TiOx with a very thin thickness brought forward the features of an ideally low subthreshold swing slope of 65 mV per decade and improved drain current at low gate voltages. The advantages of the utilization high-k dielectric for diamond MOSFETs are anticipated.

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Assembly of a high-dielectric constant thin TiO_X layer directly on H-terminated semiconductor diamond

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