Dynamical interplay between ground and excited states in quantum dot laser

G.S. Sokolovskii; V.V. Dudelev; E.D. Kolykhalova; A.G. Deryagin; A. Bakoz; I.I. Novikov; M.V. Maximov; A.E. Zhukov; V.M. Ustinov; V.I. Kuchinskii; W. Sibbett; E.U. Rafailov; E.A. Viktorov; T. Erneux

doi:10.1109/LO.2014.6886283

Dynamical interplay between ground and excited states in quantum dot laser

G.S. Sokolovskii, V.V. Dudelev, E.D. Kolykhalova, A.G. Deryagin, A. Bakoz, I.I. Novikov, M.V. Maximov, A.E. Zhukov, V.M. Ustinov, V.I. Kuchinskii, W. Sibbett, E.U. Rafailov, E.A. Viktorov, T. Erneux

Aston Institute of Photonic Technologies (AiPT)

Research output: Chapter in Book/Published conference output › Conference publication

Abstract

Full text:

Semiconductor quantum dot lasers are attractive for multipletechnological applications in biophotonics. Simultaneous two-state lasing ofground state (GS) and excited state (ES) electrons and holes in QD lasers ispossible under a certain parameter range. It has already been investigated in steady-stateoperations and in dynamical regimes and is currently a subject of the intesiveresearch.

It has been shown that the relaxation frequency in the two-state lasingregime is not a function of the total intensity [1], as could be traditionallyexpected.In this work we study damping relaxation oscillations in QD lasersimultaneously operating at two transitions, and find that under variouspumping conditions, the frequency of oscillations may decrease, increase orstay without change in time as shown in Fig1.The studied QD laser structure wasgrown on a GaAs substrate by molecular-beam epitaxy. The active region includedfive layers of self-assembled InAs QDs separated with a GaAs spacer from a5.3nm thick covering layer of InGaAs and processed into 4mm-wide mesa stripe devices. The 2.5mm long lasers withhigh-and antireflection coatings on the rear and front facets lasesimultaneously at the GS (around 1265nm) and ES (around 1190nm) in the wholerange of pumping. Pulsed electrical pumping obtained from a high power (up to2A current) pulse source was used to achieve high output power operation.

We simultaneously detect the total output and merely ES output using aBragg filter transmitting the short-wavelength and reflecting the long-wavelengthradiation. Typical QD does not demonstrate relaxation oscillations frequencybecause of the strong damping [2]. It is confirmed for the low (I<0.68A) andhigh (I>1.2 A) range of the pump currents in our experiments. The situationis different for a short range of the medium currents (0.68A<I<1.2A) asthe large scale amplitude oscillations appear after the laser turns on andstarts to operate simultaneously. The frequency of oscillations may either significantlydecrease (from 2 GHz to 1 GHz) or sufficiently increase (from 2 GHz to 4 GHz)within 20 ns of the pulse duration. The oscilations appear simultaneously at GSand ES and are always damped, but can be either inphase or antiphase dependingon the pump current and temperature conditions.

We address the excitation of the relaxation oscillations to non-instantaneousturn on of the pumping source which activates with 5ns rise time and discussthe swap of the oscillation's frequency in time to spectral shifts caused by thermaleffects.

[1] M.Abusaa, J. Danckaert, E. A. Viktorov, and T. Erneux, Phys. Rev. A 87, 063827(2013).

[2] T.Erneux, E. A. Viktorov, and P. Mandel, Phys. Rev. A 76,023819 (2007). 1

Original language	English
Title of host publication	Proceedings : 2014 international conference Laser Optics
Place of Publication	Piscataway, NJ (US)
Publisher	IEEE
Number of pages	1
ISBN (Electronic)	978-1-4799-3885-8
ISBN (Print)	978-1-4799-3884-1
DOIs	https://doi.org/10.1109/LO.2014.6886283 https://doi.org/10.1109/LO.2014.6886283
Publication status	Published - 31 Dec 2014
Event	2014 international conference Laser Optics - St. Petersburg, Russian Federation Duration: 30 Jun 2014 → 4 Jul 2014

Publication series

Name	2014 International Conference Laser Optics

Conference

Conference	2014 international conference Laser Optics
Abbreviated title	LO 2014
Country/Territory	Russian Federation
City	St. Petersburg
Period	30/06/14 → 4/07/14

Bibliographical note

© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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Sokolovskii, G. S., Dudelev, V. V., Kolykhalova, E. D., Deryagin, A. G., Bakoz, A., Novikov, I. I., Maximov, M. V., Zhukov, A. E., Ustinov, V. M., Kuchinskii, V. I., Sibbett, W., Rafailov, E. U., Viktorov, E. A., & Erneux, T. (2014). Dynamical interplay between ground and excited states in quantum dot laser. In Proceedings : 2014 international conference Laser Optics (2014 International Conference Laser Optics). IEEE. https://doi.org/10.1109/LO.2014.6886283, https://doi.org/10.1109/LO.2014.6886283

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Sokolovskii, GS, Dudelev, VV, Kolykhalova, ED, Deryagin, AG, Bakoz, A, Novikov, II, Maximov, MV, Zhukov, AE, Ustinov, VM, Kuchinskii, VI, Sibbett, W, Rafailov, EU, Viktorov, EA & Erneux, T 2014, Dynamical interplay between ground and excited states in quantum dot laser. in Proceedings : 2014 international conference Laser Optics. 2014 International Conference Laser Optics, IEEE, Piscataway, NJ (US), 2014 international conference Laser Optics, St. Petersburg, Russian Federation, 30/06/14. https://doi.org/10.1109/LO.2014.6886283, https://doi.org/10.1109/LO.2014.6886283

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T1 - Dynamical interplay between ground and excited states in quantum dot laser

AU - Sokolovskii, G.S.

AU - Dudelev, V.V.

AU - Kolykhalova, E.D.

AU - Deryagin, A.G.

AU - Bakoz, A.

AU - Novikov, I.I.

AU - Maximov, M.V.

AU - Zhukov, A.E.

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AU - Sibbett, W.

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N1 - © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

PY - 2014/12/31

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N2 - Full text: Semiconductor quantum dot lasers are attractive for multipletechnological applications in biophotonics. Simultaneous two-state lasing ofground state (GS) and excited state (ES) electrons and holes in QD lasers ispossible under a certain parameter range. It has already been investigated in steady-stateoperations and in dynamical regimes and is currently a subject of the intesiveresearch. It has been shown that the relaxation frequency in the two-state lasingregime is not a function of the total intensity [1], as could be traditionallyexpected.In this work we study damping relaxation oscillations in QD lasersimultaneously operating at two transitions, and find that under variouspumping conditions, the frequency of oscillations may decrease, increase orstay without change in time as shown in Fig1.The studied QD laser structure wasgrown on a GaAs substrate by molecular-beam epitaxy. The active region includedfive layers of self-assembled InAs QDs separated with a GaAs spacer from a5.3nm thick covering layer of InGaAs and processed into 4mm-wide mesa stripe devices. The 2.5mm long lasers withhigh-and antireflection coatings on the rear and front facets lasesimultaneously at the GS (around 1265nm) and ES (around 1190nm) in the wholerange of pumping. Pulsed electrical pumping obtained from a high power (up to2A current) pulse source was used to achieve high output power operation.We simultaneously detect the total output and merely ES output using aBragg filter transmitting the short-wavelength and reflecting the long-wavelengthradiation. Typical QD does not demonstrate relaxation oscillations frequencybecause of the strong damping [2]. It is confirmed for the low (I<0.68A) andhigh (I>1.2 A) range of the pump currents in our experiments. The situationis different for a short range of the medium currents (0.68A<I<1.2A) asthe large scale amplitude oscillations appear after the laser turns on andstarts to operate simultaneously. The frequency of oscillations may either significantlydecrease (from 2 GHz to 1 GHz) or sufficiently increase (from 2 GHz to 4 GHz)within 20 ns of the pulse duration. The oscilations appear simultaneously at GSand ES and are always damped, but can be either inphase or antiphase dependingon the pump current and temperature conditions.We address the excitation of the relaxation oscillations to non-instantaneousturn on of the pumping source which activates with 5ns rise time and discussthe swap of the oscillation's frequency in time to spectral shifts caused by thermaleffects.[1] M.Abusaa, J. Danckaert, E. A. Viktorov, and T. Erneux, Phys. Rev. A 87, 063827(2013).[2] T.Erneux, E. A. Viktorov, and P. Mandel, Phys. Rev. A 76,023819 (2007). 1

AB - Full text: Semiconductor quantum dot lasers are attractive for multipletechnological applications in biophotonics. Simultaneous two-state lasing ofground state (GS) and excited state (ES) electrons and holes in QD lasers ispossible under a certain parameter range. It has already been investigated in steady-stateoperations and in dynamical regimes and is currently a subject of the intesiveresearch. It has been shown that the relaxation frequency in the two-state lasingregime is not a function of the total intensity [1], as could be traditionallyexpected.In this work we study damping relaxation oscillations in QD lasersimultaneously operating at two transitions, and find that under variouspumping conditions, the frequency of oscillations may decrease, increase orstay without change in time as shown in Fig1.The studied QD laser structure wasgrown on a GaAs substrate by molecular-beam epitaxy. The active region includedfive layers of self-assembled InAs QDs separated with a GaAs spacer from a5.3nm thick covering layer of InGaAs and processed into 4mm-wide mesa stripe devices. The 2.5mm long lasers withhigh-and antireflection coatings on the rear and front facets lasesimultaneously at the GS (around 1265nm) and ES (around 1190nm) in the wholerange of pumping. Pulsed electrical pumping obtained from a high power (up to2A current) pulse source was used to achieve high output power operation.We simultaneously detect the total output and merely ES output using aBragg filter transmitting the short-wavelength and reflecting the long-wavelengthradiation. Typical QD does not demonstrate relaxation oscillations frequencybecause of the strong damping [2]. It is confirmed for the low (I<0.68A) andhigh (I>1.2 A) range of the pump currents in our experiments. The situationis different for a short range of the medium currents (0.68A<I<1.2A) asthe large scale amplitude oscillations appear after the laser turns on andstarts to operate simultaneously. The frequency of oscillations may either significantlydecrease (from 2 GHz to 1 GHz) or sufficiently increase (from 2 GHz to 4 GHz)within 20 ns of the pulse duration. The oscilations appear simultaneously at GSand ES and are always damped, but can be either inphase or antiphase dependingon the pump current and temperature conditions.We address the excitation of the relaxation oscillations to non-instantaneousturn on of the pumping source which activates with 5ns rise time and discussthe swap of the oscillation's frequency in time to spectral shifts caused by thermaleffects.[1] M.Abusaa, J. Danckaert, E. A. Viktorov, and T. Erneux, Phys. Rev. A 87, 063827(2013).[2] T.Erneux, E. A. Viktorov, and P. Mandel, Phys. Rev. A 76,023819 (2007). 1

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Dynamical interplay between ground and excited states in quantum dot laser

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