Mode locking of semiconductor laser with curved waveguide and passive mode expander

C.A. Williamson; M.J. Adams; A.D. Ellis; A. Borghesani

doi:10.1063/1.1539277

Mode locking of semiconductor laser with curved waveguide and passive mode expander

C.A. Williamson, M.J. Adams, A.D. Ellis, A. Borghesani

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

Abstract

Active mode locking is reported for a 1.55 μm semiconductor laser with a curved waveguide and passive mode expander, placed in a wavelength tunable external cavity. One facet with a very low reflectivity of 8×10⁻⁶ is achieved through a curved active region that tapers into an underlying passive waveguide, thus expanding the mode to give reduced divergence. 10 GHz pulses of 3.1 ps duration have been generated, with a linewidth of 0.81 nm.

Original language	English
Pages (from-to)	322-324
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	3
Early online date	12 Jan 2003
DOIs	https://doi.org/10.1063/1.1539277
Publication status	Published - 20 Jan 2003

Bibliographical note

© 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 82, 322 (2003) and may be found at https://doi.org/10.1063/1.1539277

Keywords

mode locking
semiconductor lasers
laser resonators
linewidths
reflectivity

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10.1063/1.1539277

Mode locking of semiconductor laser with curved waveguide and passive mode expander
© 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 82, 322 (2003) and may be found at https://doi.org/10.1063/1.1539277
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Cite this

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abstract = "Active mode locking is reported for a 1.55 μm semiconductor laser with a curved waveguide and passive mode expander, placed in a wavelength tunable external cavity. One facet with a very low reflectivity of 8×10−6 is achieved through a curved active region that tapers into an underlying passive waveguide, thus expanding the mode to give reduced divergence. 10 GHz pulses of 3.1 ps duration have been generated, with a linewidth of 0.81 nm.",

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AU - Adams, M.J.

AU - Ellis, A.D.

AU - Borghesani, A.

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N2 - Active mode locking is reported for a 1.55 μm semiconductor laser with a curved waveguide and passive mode expander, placed in a wavelength tunable external cavity. One facet with a very low reflectivity of 8×10−6 is achieved through a curved active region that tapers into an underlying passive waveguide, thus expanding the mode to give reduced divergence. 10 GHz pulses of 3.1 ps duration have been generated, with a linewidth of 0.81 nm.

AB - Active mode locking is reported for a 1.55 μm semiconductor laser with a curved waveguide and passive mode expander, placed in a wavelength tunable external cavity. One facet with a very low reflectivity of 8×10−6 is achieved through a curved active region that tapers into an underlying passive waveguide, thus expanding the mode to give reduced divergence. 10 GHz pulses of 3.1 ps duration have been generated, with a linewidth of 0.81 nm.

KW - mode locking

KW - semiconductor lasers

KW - laser resonators

KW - linewidths

KW - reflectivity

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Mode locking of semiconductor laser with curved waveguide and passive mode expander

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