Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements

Wei He, Rihan Wu, Igor V. Yurkevich, Leigh T. Canham, Andrey Kaplan

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We performed interferometric time-resolved simultaneous reflectance and transmittance measurements to investigate the carrier dynamics in pump-probe experiments on thin porous silicon membranes. The experimental data was analysed by using a method built on the Wentzel-Kramers-Brillouin approximation and the Drude model, allowing us to reconstruct the excited carriers’ non-uniform distribution in space and its evolution in time. The analysis revealed that the carrier dynamics in porous silicon, with ~50% porosity and native oxide chemistry, is governed by the Shockley-Read-Hall recombination process with a characteristic time constant of 375 picoseconds, whereas diffusion makes an insignificant contribution as it is suppressed by the high rate of scattering.
    Original languageEnglish
    Article number17172
    JournalScientific Reports
    Volume8
    Issue number1
    DOIs
    Publication statusPublished - 21 Nov 2018

    Bibliographical note

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