Temperature-dependent internal quantum efficiency of blue high-brightness light-emitting diodes

Ilya E. Titkov; Sergey Yu Karpov; Amit Yadav; Vera L. Zerova; Modestas Zulonas; Bastian Galler; Martin Strassburg; Ines Pietzonka; Hans Juergen Lugauer; Edik U. Rafailov

doi:10.1109/JQE.2014.2359958

Temperature-dependent internal quantum efficiency of blue high-brightness light-emitting diodes

Ilya E. Titkov^*, Sergey Yu Karpov, Amit Yadav, Vera L. Zerova, Modestas Zulonas, Bastian Galler, Martin Strassburg, Ines Pietzonka, Hans Juergen Lugauer, Edik U. Rafailov

^*Corresponding author for this work

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

Abstract

Internal quantum efficiency (IQE) of a blue high-brightness InGaN/GaN light-emitting diode (LED) was evaluated from the external quantum efficiency measured as a function of current at various temperatures ranged between 13 and 440 K. Processing the data with a novel evaluation procedure based on the ABC-model, we have determined the temperature-dependent IQE of the LED structure and light extraction efficiency of the LED chip. Separate evaluation of these parameters is helpful for further optimization of the heterostructure and chip designs. The data obtained enable making a guess on the temperature dependence of the radiative and Auger recombination coefficients, which may be important for identification of dominant mechanisms responsible for the efficiency droop in III-nitride LEDs. Thermal degradation of the LED performance in terms of the emission efficiency is also considered.

Original language	English
Pages (from-to)	911-920
Number of pages	10
Journal	IEEE Journal of Quantum Electronics
Volume	50
Issue number	11
Early online date	25 Sept 2014
DOIs	https://doi.org/10.1109/JQE.2014.2359958
Publication status	Published - Nov 2014

Bibliographical note

© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Funding: European Union through the Nanostructured Efficient White LEDs Project within the FP7 Programme under Grant 318388

Keywords

auger recombination
iII-nitrides
internal quantum efficiency
light-emitting diodes
optical emission spectra
temperature dependence

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10.1109/JQE.2014.2359958

Temperature-dependent internal quantum efficiency of blue high-brightness light-emitting diodes
© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
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http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6910236

Cite this

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title = "Temperature-dependent internal quantum efficiency of blue high-brightness light-emitting diodes",

abstract = "Internal quantum efficiency (IQE) of a blue high-brightness InGaN/GaN light-emitting diode (LED) was evaluated from the external quantum efficiency measured as a function of current at various temperatures ranged between 13 and 440 K. Processing the data with a novel evaluation procedure based on the ABC-model, we have determined the temperature-dependent IQE of the LED structure and light extraction efficiency of the LED chip. Separate evaluation of these parameters is helpful for further optimization of the heterostructure and chip designs. The data obtained enable making a guess on the temperature dependence of the radiative and Auger recombination coefficients, which may be important for identification of dominant mechanisms responsible for the efficiency droop in III-nitride LEDs. Thermal degradation of the LED performance in terms of the emission efficiency is also considered.",

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AU - Strassburg, Martin

AU - Pietzonka, Ines

AU - Lugauer, Hans Juergen

AU - Rafailov, Edik U.

N1 - © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. Funding: European Union through the Nanostructured Efficient White LEDs Project within the FP7 Programme under Grant 318388

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AB - Internal quantum efficiency (IQE) of a blue high-brightness InGaN/GaN light-emitting diode (LED) was evaluated from the external quantum efficiency measured as a function of current at various temperatures ranged between 13 and 440 K. Processing the data with a novel evaluation procedure based on the ABC-model, we have determined the temperature-dependent IQE of the LED structure and light extraction efficiency of the LED chip. Separate evaluation of these parameters is helpful for further optimization of the heterostructure and chip designs. The data obtained enable making a guess on the temperature dependence of the radiative and Auger recombination coefficients, which may be important for identification of dominant mechanisms responsible for the efficiency droop in III-nitride LEDs. Thermal degradation of the LED performance in terms of the emission efficiency is also considered.

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Temperature-dependent internal quantum efficiency of blue high-brightness light-emitting diodes

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