Wavelength-tunable cascade type-I quantum-well GaSb-based diode laser at 3.2 μm

N. B. Chichkov, A. Yadav, E. Zherebtsov, L. Shterengas, M. Wang, G. Kipshidze, G. Belenky, E. U. Rafailov

Research output: Chapter in Book/Published conference outputConference publication

Abstract

We investigate the wavelength-tuning of cascade quantum-well GaSb-based diode lasers emitting at 3.2 µm. An external-cavity setup is used to demonstrate wavelength-tuning over a range of 250 nm with a maximum output power of 8.4 mW.
Original languageEnglish
Title of host publication2018 International Conference Laser Optics (ICLO)
PublisherIEEE
Pages137-137
ISBN (Electronic)978-1-5386-3612-1
ISBN (Print)978-1-5386-3611-4
DOIs
Publication statusPublished - 16 Aug 2018
Event2018 International Conference Laser Optics (ICLO) - Saint Petersburg, Russia, Saint Petersburg, Russian Federation
Duration: 4 Jun 20188 Jun 2018

Conference

Conference2018 International Conference Laser Optics (ICLO)
Country/TerritoryRussian Federation
CitySaint Petersburg
Period4/06/188/06/18

Fingerprint

Dive into the research topics of 'Wavelength-tunable cascade type-I quantum-well GaSb-based diode laser at 3.2 μm'. Together they form a unique fingerprint.

Cite this