Broadly tunable dual-wavelength InAs/GaAs quantum-dot laser for THz generation

Ksenia A. Fedorova*, Andrei A. Gorodetsky, Daniil A. Livshits, Nikolai A. Maleev, Sergei A. Blokhin, Ksenia K. Soboleva, Victor M. Ustinov, Edik U. Rafailov

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference publication


We demonstrate an ultra-compact, room-Temperature, continuous-wave, broadly-Tunable dual-wavelength InAs/GaAs quantum-dot external-cavity diode laser in the spectral region between 1150 nm and 1301 nm with maximum output power of 280 mW. This laser source generating two modes with tunable difference-frequency (300 GHz-30 THz) has a great potential to replace commonly used bulky lasers for THz generation in photomixer devices.

Original languageEnglish
Title of host publicationProceedings : 2016 International Conference Laser Optics
Number of pages1
ISBN (Electronic)978-1-4673-9737-7
ISBN (Print)978-1-4673-9738-4
Publication statusPublished - 23 Aug 2016
Event2016 International Conference Laser Optics - St. Petersburg, Russian Federation
Duration: 27 Jun 20161 Jul 2016

Publication series

Name2016 International Conference Laser Optics (Lo)


Conference2016 International Conference Laser Optics
Abbreviated titleLO 2016
CountryRussian Federation
CitySt. Petersburg


  • quantum dot lasers
  • THz generation
  • tunable lasers

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