Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures

Lin Shao, Y.Q. Wang, J. Greg Swadener, M. Nastasi, Phillip E. Thompson, N. David Theodore

Research output: Contribution to journalArticle

Abstract

We demonstrate that a controllable cracking can be realized in Si with a buried strain layer when hydrogen is introduced using traditional H-ion implantation techniques. However, H stimulated cracking is dependent on H projected ranges; cracking occurs along a Si0.8Ge0.2 strain layer only if the H projected range is shallower than the depth of the strained layer. The absence of cracking for H ranges deeper than the strain layer is attributed to ion-irradiation induced strain relaxation, which is confirmed by Rutherford-backscattering-spectrometry channeling angular scans. The study reveals the importance of strain in initializing continuous cracking with extremely low H concentrations.
Original languageEnglish
Article number061904
Pages (from-to)061904
Number of pages1
JournalApplied Physics Letters
Volume92
Issue number6
DOIs
Publication statusPublished - 11 Feb 2008

Bibliographical note

Copyright © 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 92, 061904 (2008) and may be found at https://aip.scitation.org/doi/10.1063/1.2838338

Keywords

  • buried layers
  • channelling
  • cracks
  • elemental semiconductors
  • Ge-Si alloys
  • ion beam effects
  • ion implantation
  • Rutherford backscattering
  • semiconductor heterojunctions
  • silicon
  • stress relaxation

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  • Cite this

    Shao, L., Wang, Y. Q., Swadener, J. G., Nastasi, M., Thompson, P. E., & Theodore, N. D. (2008). Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures. Applied Physics Letters, 92(6), 061904. [061904]. https://doi.org/10.1063/1.2838338