Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures

Lin Shao; Y.Q. Wang; J. Greg Swadener; M. Nastasi; Phillip E. Thompson; N. David Theodore

doi:10.1063/1.2838338

Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures

Lin Shao, Y.Q. Wang, J. Greg Swadener, M. Nastasi, Phillip E. Thompson, N. David Theodore

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate that a controllable cracking can be realized in Si with a buried strain layer when hydrogen is introduced using traditional H-ion implantation techniques. However, H stimulated cracking is dependent on H projected ranges; cracking occurs along a Si0.8Ge0.2 strain layer only if the H projected range is shallower than the depth of the strained layer. The absence of cracking for H ranges deeper than the strain layer is attributed to ion-irradiation induced strain relaxation, which is confirmed by Rutherford-backscattering-spectrometry channeling angular scans. The study reveals the importance of strain in initializing continuous cracking with extremely low H concentrations.

Original language	English
Article number	061904
Pages (from-to)	061904
Number of pages	1
Journal	Applied Physics Letters
Volume	92
Issue number	6
DOIs	https://doi.org/10.1063/1.2838338
Publication status	Published - 11 Feb 2008

Bibliographical note

Copyright © 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 92, 061904 (2008) and may be found at https://aip.scitation.org/doi/10.1063/1.2838338

Keywords

buried layers
channelling
cracks
elemental semiconductors
Ge-Si alloys
ion beam effects
ion implantation
Rutherford backscattering
semiconductor heterojunctions
silicon
stress relaxation

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10.1063/1.2838338

Cracking in hydrogen ion-implanted
Copyright © 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 92, 061904 (2008) and may be found at https://aip.scitation.org/doi/10.1063/1.2838338
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Cite this

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title = "Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures",

abstract = "We demonstrate that a controllable cracking can be realized in Si with a buried strain layer when hydrogen is introduced using traditional H-ion implantation techniques. However, H stimulated cracking is dependent on H projected ranges; cracking occurs along a Si0.8Ge0.2 strain layer only if the H projected range is shallower than the depth of the strained layer. The absence of cracking for H ranges deeper than the strain layer is attributed to ion-irradiation induced strain relaxation, which is confirmed by Rutherford-backscattering-spectrometry channeling angular scans. The study reveals the importance of strain in initializing continuous cracking with extremely low H concentrations.",

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AU - Shao, Lin

AU - Wang, Y.Q.

AU - Swadener, J. Greg

AU - Nastasi, M.

AU - Thompson, Phillip E.

AU - Theodore, N. David

N1 - Copyright © 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 92, 061904 (2008) and may be found at https://aip.scitation.org/doi/10.1063/1.2838338

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AB - We demonstrate that a controllable cracking can be realized in Si with a buried strain layer when hydrogen is introduced using traditional H-ion implantation techniques. However, H stimulated cracking is dependent on H projected ranges; cracking occurs along a Si0.8Ge0.2 strain layer only if the H projected range is shallower than the depth of the strained layer. The absence of cracking for H ranges deeper than the strain layer is attributed to ion-irradiation induced strain relaxation, which is confirmed by Rutherford-backscattering-spectrometry channeling angular scans. The study reveals the importance of strain in initializing continuous cracking with extremely low H concentrations.

KW - buried layers

KW - channelling

KW - cracks

KW - elemental semiconductors

KW - Ge-Si alloys

KW - ion beam effects

KW - ion implantation

KW - Rutherford backscattering

KW - semiconductor heterojunctions

KW - silicon

KW - stress relaxation

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Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures

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