Determination of recombination coefficients for nanocrystalline silicon embedded in hydrogenated amorphous silicon

Wei He, Ammar Zakar, Thomas Roger, Igor V. Yurkevich, Andre Kaplan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in samples of nanocrystalline silicon embedded in a matrix of hydrogenated amorphous silicon. We found that the dynamics can be described by a rate equation including linear and quadratic terms corresponding to recombination processes associated with impurities and impurity-assisted Auger ionization, respectively. We determined the values of the recombination coefficients using the initial concentrations method. We report the coefficients of 1.5 × 1011 s-1 and 1.1 × 10-10 cm3 s-1 for the impurity-assisted recombination and Auger ionization, respectively.

Original languageEnglish
Pages (from-to)3889-3892
Number of pages4
JournalOptics Letters
Volume40
Issue number16
DOIs
Publication statusPublished - 13 Aug 2015

Bibliographical note

© 2015 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.

Funding: EPSRC (EP/K503873/1)

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