Distributed feedback InGaN/GaN laser diodes

Thomas J. Slight, Edik U. Rafailov, Amit Yadav, Anthony E. Kelly, Kevin E. Docherty, Piotr Perlin, Mike Leszczyński, Stephen P. Najda, Szymon Grzanka, Szymon Stanczyk, Scott Watson, Jen-inn Chyi (Editor), Hadis Morkoç (Editor), Hiroshi Fujioka (Editor)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a
simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.
Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Subtitle of host publication Gallium Nitride Materials and Devices XIII 2018
PublisherSPIE
Pages45
Volume10532
ISBN (Print)978-151061549-6
DOIs
Publication statusPublished - 23 Feb 2018
EventGallium Nitride Materials and Devices XIII - San Francisco, United States
Duration: 27 Jan 20181 Feb 2018

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume10532
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceGallium Nitride Materials and Devices XIII
Period27/01/181/02/18

Bibliographical note

Copyright 2018) Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

Keywords

  • Semiconductor lasers
  • Distributed feedback laser diodes
  • InGaN
  • Sidewall grating
  • Slotted laser
  • Notched grating
  • Lateral grating

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  • Cite this

    Slight, T. J., Rafailov, E. U., Yadav, A., Kelly, A. E., Docherty, K. E., Perlin, P., Leszczyński, M., Najda, S. P., Grzanka, S., Stanczyk, S., Watson, S., Chyi, J. (Ed.), Morkoç, H. (Ed.), & Fujioka, H. (Ed.) (2018). Distributed feedback InGaN/GaN laser diodes. In Proceedings of SPIE - The International Society for Optical Engineering: Gallium Nitride Materials and Devices XIII 2018 (Vol. 10532, pp. 45). (Proceedings of SPIE; Vol. 10532). SPIE. https://doi.org/10.1117/12.2285632