Distributed feedback InGaN/GaN laser diodes

Thomas J. Slight, Edik U. Rafailov, Amit Yadav, Anthony E. Kelly, Kevin E. Docherty, Piotr Perlin, Mike Leszczyński, Stephen P. Najda, Szymon Grzanka, Szymon Stanczyk, Scott Watson, Jen-inn Chyi (Editor), Hadis Morkoç (Editor), Hiroshi Fujioka (Editor)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a
simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.
Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Subtitle of host publication Gallium Nitride Materials and Devices XIII 2018
PublisherSPIE
Pages45
Volume10532
ISBN (Print)978-151061549-6
DOIs
Publication statusPublished - 23 Feb 2018
EventGallium Nitride Materials and Devices XIII - San Francisco, United States
Duration: 27 Jan 20181 Feb 2018

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume10532
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceGallium Nitride Materials and Devices XIII
Period27/01/181/02/18

Fingerprint

gallium nitrides
semiconductor lasers
gratings
lasers
cooling
atomic clocks
distributed feedback lasers
data storage
coupling coefficients
wavelengths
optical communication
ridges
purity
adjusting
communication
routes
damage
cavities
fabrication
defects

Bibliographical note

Copyright 2018) Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

Keywords

  • Semiconductor lasers
  • Distributed feedback laser diodes
  • InGaN
  • Sidewall grating
  • Slotted laser
  • Notched grating
  • Lateral grating

Cite this

Slight, T. J., Rafailov, E. U., Yadav, A., Kelly, A. E., Docherty, K. E., Perlin, P., ... Fujioka, H. (Ed.) (2018). Distributed feedback InGaN/GaN laser diodes. In Proceedings of SPIE - The International Society for Optical Engineering: Gallium Nitride Materials and Devices XIII 2018 (Vol. 10532, pp. 45). (Proceedings of SPIE; Vol. 10532). SPIE. https://doi.org/10.1117/12.2285632
Slight, Thomas J. ; Rafailov, Edik U. ; Yadav, Amit ; Kelly, Anthony E. ; Docherty, Kevin E. ; Perlin, Piotr ; Leszczyński, Mike ; Najda, Stephen P. ; Grzanka, Szymon ; Stanczyk, Szymon ; Watson, Scott ; Chyi, Jen-inn (Editor) ; Morkoç, Hadis (Editor) ; Fujioka, Hiroshi (Editor). / Distributed feedback InGaN/GaN laser diodes. Proceedings of SPIE - The International Society for Optical Engineering: Gallium Nitride Materials and Devices XIII 2018. Vol. 10532 SPIE, 2018. pp. 45 (Proceedings of SPIE).
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title = "Distributed feedback InGaN/GaN laser diodes",
abstract = "We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include asimpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.",
keywords = "Semiconductor lasers, Distributed feedback laser diodes, InGaN, Sidewall grating, Slotted laser, Notched grating, Lateral grating",
author = "Slight, {Thomas J.} and Rafailov, {Edik U.} and Amit Yadav and Kelly, {Anthony E.} and Docherty, {Kevin E.} and Piotr Perlin and Mike Leszczyński and Najda, {Stephen P.} and Szymon Grzanka and Szymon Stanczyk and Scott Watson and Jen-inn Chyi and Hadis Morko{\cc} and Hiroshi Fujioka",
note = "Copyright 2018) Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.",
year = "2018",
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Slight, TJ, Rafailov, EU, Yadav, A, Kelly, AE, Docherty, KE, Perlin, P, Leszczyński, M, Najda, SP, Grzanka, S, Stanczyk, S, Watson, S, Chyi, J (ed.), Morkoç, H (ed.) & Fujioka, H (ed.) 2018, Distributed feedback InGaN/GaN laser diodes. in Proceedings of SPIE - The International Society for Optical Engineering: Gallium Nitride Materials and Devices XIII 2018. vol. 10532, Proceedings of SPIE, vol. 10532, SPIE, pp. 45, Gallium Nitride Materials and Devices XIII, 27/01/18. https://doi.org/10.1117/12.2285632

Distributed feedback InGaN/GaN laser diodes. / Slight, Thomas J.; Rafailov, Edik U.; Yadav, Amit; Kelly, Anthony E.; Docherty, Kevin E.; Perlin, Piotr; Leszczyński, Mike; Najda, Stephen P.; Grzanka, Szymon; Stanczyk, Szymon; Watson, Scott; Chyi, Jen-inn (Editor); Morkoç, Hadis (Editor); Fujioka, Hiroshi (Editor).

Proceedings of SPIE - The International Society for Optical Engineering: Gallium Nitride Materials and Devices XIII 2018. Vol. 10532 SPIE, 2018. p. 45 (Proceedings of SPIE; Vol. 10532).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Yadav, Amit

AU - Kelly, Anthony E.

AU - Docherty, Kevin E.

AU - Perlin, Piotr

AU - Leszczyński, Mike

AU - Najda, Stephen P.

AU - Grzanka, Szymon

AU - Stanczyk, Szymon

AU - Watson, Scott

A2 - Chyi, Jen-inn

A2 - Morkoç, Hadis

A2 - Fujioka, Hiroshi

N1 - Copyright 2018) Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

PY - 2018/2/23

Y1 - 2018/2/23

N2 - We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include asimpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.

AB - We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include asimpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.

KW - Semiconductor lasers

KW - Distributed feedback laser diodes

KW - InGaN

KW - Sidewall grating

KW - Slotted laser

KW - Notched grating

KW - Lateral grating

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M3 - Conference contribution

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BT - Proceedings of SPIE - The International Society for Optical Engineering

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Slight TJ, Rafailov EU, Yadav A, Kelly AE, Docherty KE, Perlin P et al. Distributed feedback InGaN/GaN laser diodes. In Proceedings of SPIE - The International Society for Optical Engineering: Gallium Nitride Materials and Devices XIII 2018. Vol. 10532. SPIE. 2018. p. 45. (Proceedings of SPIE). https://doi.org/10.1117/12.2285632