Electrical and ferroelectric properties of rare-earth-doped Na0.5Bi4.0RE0.5Ti4O15 (RE = Eu, Gd and Dy) thin films

M.H. Kwak, C.M. Raghavan, S.S. Kim, W.-J. Kim

Research output: Contribution to journalArticle

Abstract

A study of the structural, electrical and ferroelectric properties of layered Aurivillius-type Na0.5Bi4.5Ti4O15 (NaBTi) and Na0.5Bi4.0RE0.5Ti4O15 (RE = Eu, Gd and Dy) thin films is reported. These films were fabricated on Pt-coated Si(100) substrates by using a chemical solution deposition method followed by a heat treatment. The rare-earth elements used as dopants, such as Eu, Gd and Dy, were found to be effective in improving the leakage current densities and the ferroelectric properties of the layered Na0.5Bi4.5Ti4O15 thin films without affecting their original Aurivillius structures. Based on the measured ferroelectric polarization-electric field (P−E) hysteresis loops, we found that the Gd-doped NaBTi thin film, among all the films, exhibited the highest ferroelectric remnant polarization of 2Pr = 37.4 μC/cm2 and a low coercive electric field of 2Ec = 187 kV/cm at an applied electric field of 475 kV/cm. Furthermore, the lowest value of the leakage current density of 6.12×107 A/cm2 at an applied electric field of 100 kV/cm was measured for the Gd-doped NaBTi thin film.
Original languageEnglish
Pages (from-to)1272-1278
JournalNew Physics: Sae Mulli
Volume67
DOIs
Publication statusPublished - 30 Nov 2017

Fingerprint

rare earth elements
electrical properties
electric fields
thin films
leakage
current density
polarization
heat treatment
hysteresis

Bibliographical note

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Cite this

Kwak, M.H. ; Raghavan, C.M. ; Kim, S.S. ; Kim, W.-J. / Electrical and ferroelectric properties of rare-earth-doped Na0.5Bi4.0RE0.5Ti4O15 (RE = Eu, Gd and Dy) thin films. In: New Physics: Sae Mulli. 2017 ; Vol. 67. pp. 1272-1278.
@article{29b66b76e02d4bc3b86f75271e1a948c,
title = "Electrical and ferroelectric properties of rare-earth-doped Na0.5Bi4.0RE0.5Ti4O15 (RE = Eu, Gd and Dy) thin films",
abstract = "A study of the structural, electrical and ferroelectric properties of layered Aurivillius-type Na0.5Bi4.5Ti4O15 (NaBTi) and Na0.5Bi4.0RE0.5Ti4O15 (RE = Eu, Gd and Dy) thin films is reported. These films were fabricated on Pt-coated Si(100) substrates by using a chemical solution deposition method followed by a heat treatment. The rare-earth elements used as dopants, such as Eu, Gd and Dy, were found to be effective in improving the leakage current densities and the ferroelectric properties of the layered Na0.5Bi4.5Ti4O15 thin films without affecting their original Aurivillius structures. Based on the measured ferroelectric polarization-electric field (P−E) hysteresis loops, we found that the Gd-doped NaBTi thin film, among all the films, exhibited the highest ferroelectric remnant polarization of 2Pr = 37.4 μC/cm2 and a low coercive electric field of 2Ec = 187 kV/cm at an applied electric field of 475 kV/cm. Furthermore, the lowest value of the leakage current density of 6.12×107 A/cm2 at an applied electric field of 100 kV/cm was measured for the Gd-doped NaBTi thin film.",
author = "M.H. Kwak and C.M. Raghavan and S.S. Kim and W.-J. Kim",
note = "This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.",
year = "2017",
month = "11",
day = "30",
doi = "10.3938/NPSM.67.1272",
language = "English",
volume = "67",
pages = "1272--1278",

}

Electrical and ferroelectric properties of rare-earth-doped Na0.5Bi4.0RE0.5Ti4O15 (RE = Eu, Gd and Dy) thin films. / Kwak, M.H.; Raghavan, C.M.; Kim, S.S.; Kim, W.-J.

In: New Physics: Sae Mulli, Vol. 67, 30.11.2017, p. 1272-1278.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical and ferroelectric properties of rare-earth-doped Na0.5Bi4.0RE0.5Ti4O15 (RE = Eu, Gd and Dy) thin films

AU - Kwak, M.H.

AU - Raghavan, C.M.

AU - Kim, S.S.

AU - Kim, W.-J.

N1 - This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

PY - 2017/11/30

Y1 - 2017/11/30

N2 - A study of the structural, electrical and ferroelectric properties of layered Aurivillius-type Na0.5Bi4.5Ti4O15 (NaBTi) and Na0.5Bi4.0RE0.5Ti4O15 (RE = Eu, Gd and Dy) thin films is reported. These films were fabricated on Pt-coated Si(100) substrates by using a chemical solution deposition method followed by a heat treatment. The rare-earth elements used as dopants, such as Eu, Gd and Dy, were found to be effective in improving the leakage current densities and the ferroelectric properties of the layered Na0.5Bi4.5Ti4O15 thin films without affecting their original Aurivillius structures. Based on the measured ferroelectric polarization-electric field (P−E) hysteresis loops, we found that the Gd-doped NaBTi thin film, among all the films, exhibited the highest ferroelectric remnant polarization of 2Pr = 37.4 μC/cm2 and a low coercive electric field of 2Ec = 187 kV/cm at an applied electric field of 475 kV/cm. Furthermore, the lowest value of the leakage current density of 6.12×107 A/cm2 at an applied electric field of 100 kV/cm was measured for the Gd-doped NaBTi thin film.

AB - A study of the structural, electrical and ferroelectric properties of layered Aurivillius-type Na0.5Bi4.5Ti4O15 (NaBTi) and Na0.5Bi4.0RE0.5Ti4O15 (RE = Eu, Gd and Dy) thin films is reported. These films were fabricated on Pt-coated Si(100) substrates by using a chemical solution deposition method followed by a heat treatment. The rare-earth elements used as dopants, such as Eu, Gd and Dy, were found to be effective in improving the leakage current densities and the ferroelectric properties of the layered Na0.5Bi4.5Ti4O15 thin films without affecting their original Aurivillius structures. Based on the measured ferroelectric polarization-electric field (P−E) hysteresis loops, we found that the Gd-doped NaBTi thin film, among all the films, exhibited the highest ferroelectric remnant polarization of 2Pr = 37.4 μC/cm2 and a low coercive electric field of 2Ec = 187 kV/cm at an applied electric field of 475 kV/cm. Furthermore, the lowest value of the leakage current density of 6.12×107 A/cm2 at an applied electric field of 100 kV/cm was measured for the Gd-doped NaBTi thin film.

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-85035776680&partnerID=MN8TOARS

UR - http://www.npsm-kps.org/journal/view.html?volume=67&number=11&spage=1272&year=2017

U2 - 10.3938/NPSM.67.1272

DO - 10.3938/NPSM.67.1272

M3 - Article

VL - 67

SP - 1272

EP - 1278

ER -