Electronic properties of homoepitaxial (111) highly boron-doped diamond films

Haitao Ye, Niall Tumilty, Mose Bevilacqua, Richard B Jackman, Stephane Curat, Philippe Bergonzo, Bertrand Bazin

Research output: Contribution to journalArticle

Abstract

The use of diamond as a semiconductor for the realization of transistor structures, which can operate at high temperatures (>700 K), is of increasing interest. In terms of bipolar devices, the growth of n-type phosphorus doped diamond is more efficient on the (111) growth plane; p-type boron-doped diamond growth has been most usually grown in the (100) direction and, hence, this study into the electronic properties, at high temperatures, of boron-doped diamond (111) homoepitaxial layers. It is shown that highly doped layers (hole carrier concentrations as high as 2×1020 cm-3) can be produced without promoting the onset of (unwanted) hopping conduction. The persistence of valance-band conduction in these films enables relatively high mobility values to be measured ( ~ 20 cm2/V?s) and, intriguingly, these values are not significantly reduced at high temperatures. The layers also display very low compensation levels, a fact that may explain the high mobility values since compensation is required for hopping conduction. The results are discussed in terms of the potential of these types of layers for use with high temperature compatible diamond transistors.
Original languageEnglish
Article number054503
Pages (from-to)054503
Number of pages1
JournalJournal of Applied Physics
Volume103
Issue number5
DOIs
Publication statusPublished - 1 Mar 2008

Bibliographical note

Copyright © 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics 103, 054503 (2008) and may be found at https://doi.org/10.1063/1.2837114

Keywords

  • boron
  • diamond
  • doping profiles
  • elemental semiconductors
  • hole density
  • hopping conduction
  • semiconductor epitaxial layers
  • valence bands

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    Ye, H., Tumilty, N., Bevilacqua, M., Jackman, R. B., Curat, S., Bergonzo, P., & Bazin, B. (2008). Electronic properties of homoepitaxial (111) highly boron-doped diamond films. Journal of Applied Physics, 103(5), 054503. [054503]. https://doi.org/10.1063/1.2837114