Generation of pi Modes in Semiconductor Vertical-Cavity Surface-Emitting Lasers

G. S. Sokolovskii, V. V. Dudelev, A. M. Monakhov, A. Yu Savenko, S. A. Blokhin, A. G. Deryagin, S. A. Zolotovskaya, A. G. Kuzmenkov, S. N. Losev, V. V. Luchinin, N. A. Maleev, E. U. Rafailov, W. Sibbett, V. I. Kuchinskii

Research output: Contribution to journalArticlepeer-review

Abstract

We have theoretically and experimentally studied optical emission from the side faces of mesa structures for vertical-cavity surface-emitting lasers (VCSELs). The results of spatially resolved spectral measurements show that a new type of lasing modes is found in VCSELs with circular mesa structures, which corresponds to the π mode propagation along the mesa diameter with reflection from the sloped walls and the bottom Bragg mirror.
Original languageEnglish
Article number1133
JournalTechnical Physics Letters
Volume35
DOIs
Publication statusPublished - 24 Dec 2009

Fingerprint

Dive into the research topics of 'Generation of pi Modes in Semiconductor Vertical-Cavity Surface-Emitting Lasers'. Together they form a unique fingerprint.

Cite this