High-power operation of quantum-dot semiconductor disk laser at 1180 nm

Dalia Al Nakdali, Mahmoud Gaafar, Mohammad K. Shakfa, Fan Zhang, Max Vaupel, Ksenia Fedorova, Arash Rahimi-Iman, Edik Rafailov, Martin Koch

Research output: Contribution to journalArticle

Abstract

In this letter, we report on a high-power operation of an optically pumped quantum-dot semiconductor disk laser designed for emission at 1180 nm. As a consequence of the optimization of the operation conditions, a record-high continuous-wave output power exceeding 7 W is obtained for this wavelength at a heat-sink temperature of 2 °C. A wavelength tuning over a range of 37 nm is achieved using a birefringent filter inside the cavity.

Original languageEnglish
Pages (from-to)1128-1131
Number of pages4
JournalIEEE Photonics Technology Letters
Volume27
Issue number10
Early online date3 Mar 2015
DOIs
Publication statusPublished - 15 May 2015

Bibliographical note

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Funding: European Community’s Seventh Framework Programme through the FAST-DOT Project under Contract 224338 and in part by the German Research Foundation under Project GRK1782

Keywords

  • optical pumping
  • quantum-dot (QD) semiconductors
  • semiconductor disk laser (SDL)
  • vertical-external cavity surface-emitting laser (VECSEL)
  • wavelength tuning

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  • Cite this

    Al Nakdali, D., Gaafar, M., Shakfa, M. K., Zhang, F., Vaupel, M., Fedorova, K., Rahimi-Iman, A., Rafailov, E., & Koch, M. (2015). High-power operation of quantum-dot semiconductor disk laser at 1180 nm. IEEE Photonics Technology Letters, 27(10), 1128-1131. https://doi.org/10.1109/LPT.2015.2408619