High-power operation of quantum-dot semiconductor disk laser at 1180 nm

Dalia Al Nakdali; Mahmoud Gaafar; Mohammad K. Shakfa; Fan Zhang; Max Vaupel; Ksenia Fedorova; Arash Rahimi-Iman; Edik Rafailov; Martin Koch

doi:10.1109/LPT.2015.2408619

High-power operation of quantum-dot semiconductor disk laser at 1180 nm

Dalia Al Nakdali, Mahmoud Gaafar, Mohammad K. Shakfa, Fan Zhang, Max Vaupel, Ksenia Fedorova, Arash Rahimi-Iman, Edik Rafailov, Martin Koch

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

Abstract

In this letter, we report on a high-power operation of an optically pumped quantum-dot semiconductor disk laser designed for emission at 1180 nm. As a consequence of the optimization of the operation conditions, a record-high continuous-wave output power exceeding 7 W is obtained for this wavelength at a heat-sink temperature of 2 °C. A wavelength tuning over a range of 37 nm is achieved using a birefringent filter inside the cavity.

Original language	English
Pages (from-to)	1128-1131
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	27
Issue number	10
Early online date	3 Mar 2015
DOIs	https://doi.org/10.1109/LPT.2015.2408619
Publication status	Published - 15 May 2015

Bibliographical note

© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Funding: European Community’s Seventh Framework Programme through the FAST-DOT Project under Contract 224338 and in part by the German Research Foundation under Project GRK1782

Keywords

optical pumping
quantum-dot (QD) semiconductors
semiconductor disk laser (SDL)
vertical-external cavity surface-emitting laser (VECSEL)
wavelength tuning

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10.1109/LPT.2015.2408619

High-power operation of quantum-dot semiconductor disk laser at 1180 nm
© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Accepted author manuscript, 198 KB

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7053940

Cite this

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title = "High-power operation of quantum-dot semiconductor disk laser at 1180 nm",

abstract = "In this letter, we report on a high-power operation of an optically pumped quantum-dot semiconductor disk laser designed for emission at 1180 nm. As a consequence of the optimization of the operation conditions, a record-high continuous-wave output power exceeding 7 W is obtained for this wavelength at a heat-sink temperature of 2 °C. A wavelength tuning over a range of 37 nm is achieved using a birefringent filter inside the cavity.",

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AU - Zhang, Fan

AU - Vaupel, Max

AU - Fedorova, Ksenia

AU - Rahimi-Iman, Arash

AU - Rafailov, Edik

AU - Koch, Martin

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High-power operation of quantum-dot semiconductor disk laser at 1180 nm

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Keywords

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