Increasing the fracture toughness of silicon by ion implantation

J.G. Swadener, M. Nastasi

Research output: Contribution to journalArticle

Abstract

Previous studies have shown that moderate doses of radiation can lead to increased fracture toughness in ceramics. An experimental investigation was conducted to determine the effects of ion implantation on fracture toughness in silicon. Specimens implanted with Ne showed increased fracture toughness, over the entire range of implantations tested. Using ions of various energies to better distribute implantation damage further increased the fracture toughness even though the region of amorphous damage was slightly decreased. The implantation damage accumulated in a predictable manner so that fracture toughness could be optimized.
Original languageEnglish
Pages (from-to)937-940
Number of pages4
JournalNuclear Instruments and Methods in Physics Research: Section B
Volume206
DOIs
Publication statusPublished - May 2003

Bibliographical note

© 2003 Elsevier Science B.V. All rights reserved

Keywords

  • fracture mechanics
  • implantation
  • radiation effects
  • silicone

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