@inproceedings{a11c87ce18d1475282b80557d43ac1fb,
title = "InGaAs Quantum Dot 1050 nm Saturable Absorber Mirror: Investigation under High Excitation Condition",
abstract = "In this paper, semiconductor saturable absorber mirror designed for the near-IR spectra and based on InGaAs quantum dots was investigated. Absorption saturation, absorption femtosecond recovery kinetics measured at various close to resonance quantum energies revealed the wavelength ~ 1050 nm as best performing absorption bleaching (highest value of 2 % for reflectivity change) for this sample. Nonlinear absorption, carrier thermalization appeared to govern carrier generation, their dynamics in the quantum dots.",
author = "E. Jelmakas and R. Tomasiunas and K. Wilcox and E. Rafailov and I. Krestnikov",
year = "2009",
language = "English",
isbn = "978-1-4244-4825-8",
series = "Icton: 2009 11th International Conference on Transparent Optical Networks, Vols 1 and 2",
publisher = "IEEE",
booktitle = "2009 11th International Conference on Transparent Optical Networks",
address = "United States",
note = "ICTON 2009: 11th International Conference on Transparent Optical Networks ; Conference date: 28-06-2009 Through 02-07-2009",
}