InGaN/GaN Laser Diodes with High Order Notched Gratings

Thomas J. Slight, Amit Yadav, Opeoluwa Odedina, Wyn Meredith, Kevin E. Docherty, Edik Rafailov, Anthony E. Kelly

Research output: Contribution to journalArticlepeer-review


We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.

Original languageEnglish
Pages (from-to)2020-2022
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number3
Early online date5 Oct 2017
Publication statusPublished - 1 Dec 2017

Bibliographical note

Copyright: IEEE


  • Distributed feedback laser diodes
  • GaN
  • InGaN
  • Lateral grating
  • Notched grating
  • Semiconductor lasers
  • Sidewall grating
  • Slotted laser


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