InGaN/GaN Laser Diodes with High Order Notched Gratings

Thomas J. Slight, Amit Yadav, Opeoluwa Odedina, Wyn Meredith, Kevin E. Docherty, Edik Rafailov, Anthony E. Kelly

Research output: Contribution to journalArticle

Abstract

We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.

Original languageEnglish
JournalIEEE Photonics Technology Letters
Issue number99
Early online date5 Oct 2017
DOIs
Publication statusE-pub ahead of print - 5 Oct 2017

Bibliographical note

Copyright: IEEE

Keywords

  • Distributed feedback laser diodes
  • GaN
  • InGaN
  • Lateral grating
  • Notched grating
  • Semiconductor lasers
  • Sidewall grating
  • Slotted laser

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