Initial nucleation study and new technique for sublimation growth of AlN on SiC substrate

Y.  Shi; B. Liu; L. Liu; H.M. Meyer III; E.A. Payzant; L.R. Walker; N.D. Evans; Greg Swadener; J. Chaudhuri; Joy Chaudhuri

doi:10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S

Initial nucleation study and new technique for sublimation growth of AlN on SiC substrate

Y. Shi, B. Liu, L. Liu, H.M. Meyer III, E.A. Payzant, L.R. Walker, N.D. Evans, Greg Swadener, J. Chaudhuri, Joy Chaudhuri

Research output: Contribution to journal › Article › peer-review

Abstract

Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.

Original language	English
Pages (from-to)	757-762
Number of pages	6
Journal	Physica Status Solidi A
Volume	188
Issue number	2
Early online date	23 Nov 2001
DOIs	https://doi.org/10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S
Publication status	Published - Dec 2001

Keywords

61.10.Nz
68.37.Hk
Hk; 68.37.Ps
81.05.Ea
81.15.Gh
S7.14

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10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S

Cite this

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title = "Initial nucleation study and new technique for sublimation growth of AlN on SiC substrate",

abstract = "Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.",

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author = "Y. Shi and B. Liu and L. Liu and {Meyer III}, H.M. and E.A. Payzant and L.R. Walker and N.D. Evans and Greg Swadener and J. Chaudhuri and Joy Chaudhuri",

year = "2001",

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doi = "10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S",

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TY - JOUR

T1 - Initial nucleation study and new technique for sublimation growth of AlN on SiC substrate

AU - Shi, Y.

AU - Liu, B.

AU - Liu, L.

AU - Meyer III, H.M.

AU - Payzant, E.A.

AU - Walker, L.R.

AU - Evans, N.D.

AU - Swadener, Greg

AU - Chaudhuri, J.

AU - Chaudhuri, Joy

PY - 2001/12

Y1 - 2001/12

N2 - Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.

AB - Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.

KW - 61.10.Nz

KW - 68.37.Hk

KW - Hk; 68.37.Ps

KW - 81.05.Ea

KW - 81.15.Gh

KW - S7.14

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UR - http://onlinelibrary.wiley.com/doi/10.1002/1521-396X%28200112%29188:2%3C757::AID-PSSA757%3E3.0.CO;2-S/abstract;jsessionid=E12CF5B829F724DF694AF27ED32EF7F4.f04t04

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JO - Physica Status Solidi A

JF - Physica Status Solidi A

IS - 2

ER -

Initial nucleation study and new technique for sublimation growth of AlN on SiC substrate

Abstract

Keywords

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