Initial nucleation study and new technique for sublimation growth of AlN on SiC substrate

Y. Shi, B. Liu, L. Liu, H.M. Meyer III, E.A. Payzant, L.R. Walker, N.D. Evans, Greg Swadener, J. Chaudhuri, Joy Chaudhuri

Research output: Contribution to journalArticle

Abstract

Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.
Original languageEnglish
Pages (from-to)757-762
Number of pages6
JournalPhysica Status Solidi A
Volume188
Issue number2
Early online date23 Nov 2001
DOIs
Publication statusPublished - Dec 2001

Keywords

  • 61.10.Nz
  • 68.37.Hk
  • Hk; 68.37.Ps
  • 81.05.Ea
  • 81.15.Gh
  • S7.14

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    Shi, Y., Liu, B., Liu, L., Meyer III, H. M., Payzant, E. A., Walker, L. R., Evans, N. D., Swadener, G., Chaudhuri, J., & Chaudhuri, J. (2001). Initial nucleation study and new technique for sublimation growth of AlN on SiC substrate. Physica Status Solidi A, 188(2), 757-762. https://doi.org/10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S