Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.
|Number of pages||6|
|Journal||Physica Status Solidi A|
|Early online date||23 Nov 2001|
|Publication status||Published - Dec 2001|
- Hk; 68.37.Ps