Single crystal platelets of AlN were successfully grown on 6H-SiC(0001) by a novel technique designed to suppress SiC decomposition, promote two-dimensional growth, and eliminate cracking in the AlN. X-ray diffractometry and synchrotron white beam X-ray topography demonstrate that the final AlN single crystal is of high structural quality.
|Number of pages||6|
|Journal||Physica Status Solidi A|
|Early online date||23 Nov 2001|
|Publication status||Published - Dec 2001|
- Hk; 68.37.Ps
Shi, Y., Liu, B., Liu, L., Meyer III, H. M., Payzant, E. A., Walker, L. R., Evans, N. D., Swadener, G., Chaudhuri, J., & Chaudhuri, J. (2001). Initial nucleation study and new technique for sublimation growth of AlN on SiC substrate. Physica Status Solidi A, 188(2), 757-762. https://doi.org/10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S