TY - JOUR
T1 - Microstructural, electrical and ferroelectric properties of BiFe
0.95
Mn
0.05
O
3
thin film grown on Ge-doped ZnO electrode
AU - Raghavan, C. M.
AU - Kim, J. W.
AU - Song, T. K.
AU - Kim, S. S.
PY - 2016/2/1
Y1 - 2016/2/1
N2 -
The structural, electrical and ferroelectric properties of a Mn-doped BiFe
0.95
Mn
0.05
O
3
(BFMO) thin film grown on a (0 0 l) textured Ge-doped ZnO (GZO)/Si(1 0 0) substrate are reported. The GZO served as a buffer layer for improving the grain growth and the crystallization of the BFMO thin film. Predominantly, the GZO layer, which promotes the grain growth of the (l 0 0) textured BFMO thin film, was utilized as both top and bottom electrodes to assess the electrical and the ferroelectric properties of the BFMO thin film. A study of the electrical properties revealed a low leakage current density (4.95 × 10
-6
A/cm
2
at 100 kV/cm) and a large stability against electrical breakdown for the GZO/BFMO/GZO capacitor. The ferroelectric study determined a large value for the remnant polarization (2P
r
), 78.37 μC/cm
2
, at an applied electric field of 895 kV/cm for the GZO/BFMO/GZO capacitor. Furthermore, the GZO/BFMO/GZO capacitor showed stable polarization switching even after 1.44 × 10
10
electrical cycles.
AB -
The structural, electrical and ferroelectric properties of a Mn-doped BiFe
0.95
Mn
0.05
O
3
(BFMO) thin film grown on a (0 0 l) textured Ge-doped ZnO (GZO)/Si(1 0 0) substrate are reported. The GZO served as a buffer layer for improving the grain growth and the crystallization of the BFMO thin film. Predominantly, the GZO layer, which promotes the grain growth of the (l 0 0) textured BFMO thin film, was utilized as both top and bottom electrodes to assess the electrical and the ferroelectric properties of the BFMO thin film. A study of the electrical properties revealed a low leakage current density (4.95 × 10
-6
A/cm
2
at 100 kV/cm) and a large stability against electrical breakdown for the GZO/BFMO/GZO capacitor. The ferroelectric study determined a large value for the remnant polarization (2P
r
), 78.37 μC/cm
2
, at an applied electric field of 895 kV/cm for the GZO/BFMO/GZO capacitor. Furthermore, the GZO/BFMO/GZO capacitor showed stable polarization switching even after 1.44 × 10
10
electrical cycles.
KW - A. Thin films
KW - B. Laser deposition
KW - B. Microstructure
KW - D. Electrical properties
KW - D. Ferroelectricity
UR - http://www.scopus.com/inward/record.url?scp=84946022782&partnerID=8YFLogxK
UR - https://www.sciencedirect.com/science/article/pii/S0025540815301677?via%3Dihub
U2 - 10.1016/j.materresbull.2015.10.033
DO - 10.1016/j.materresbull.2015.10.033
M3 - Article
AN - SCOPUS:84946022782
SN - 0025-5408
VL - 74
SP - 164
EP - 168
JO - Materials Research Bulletin
JF - Materials Research Bulletin
ER -