Microstructural, electrical and ferroelectric properties of BiFe 0.95 Mn 0.05 O 3 thin film grown on Ge-doped ZnO electrode

C. M. Raghavan, J. W. Kim, T. K. Song, S. S. Kim*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The structural, electrical and ferroelectric properties of a Mn-doped BiFe 0.95 Mn 0.05 O 3 (BFMO) thin film grown on a (0 0 l) textured Ge-doped ZnO (GZO)/Si(1 0 0) substrate are reported. The GZO served as a buffer layer for improving the grain growth and the crystallization of the BFMO thin film. Predominantly, the GZO layer, which promotes the grain growth of the (l 0 0) textured BFMO thin film, was utilized as both top and bottom electrodes to assess the electrical and the ferroelectric properties of the BFMO thin film. A study of the electrical properties revealed a low leakage current density (4.95 × 10 -6 A/cm 2 at 100 kV/cm) and a large stability against electrical breakdown for the GZO/BFMO/GZO capacitor. The ferroelectric study determined a large value for the remnant polarization (2P r ), 78.37 μC/cm 2 , at an applied electric field of 895 kV/cm for the GZO/BFMO/GZO capacitor. Furthermore, the GZO/BFMO/GZO capacitor showed stable polarization switching even after 1.44 × 10 10 electrical cycles.

Original languageEnglish
Pages (from-to)164-168
Number of pages5
JournalMaterials Research Bulletin
Volume74
DOIs
Publication statusPublished - 1 Feb 2016

Keywords

  • A. Thin films
  • B. Laser deposition
  • B. Microstructure
  • D. Electrical properties
  • D. Ferroelectricity

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