New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality

M. Ruiz, N. Michel, M. Calligaro, Y. Robert, M. Krakowski, D. I. Nikitichev, M. A. Cataluna, D. Livshits, E. U. Rafailov

Research output: Chapter in Book/Published conference outputConference publication

Abstract

With a fully gain guided quantum-dot tapered laser diode we demonstrate stable low beam divergence, high beam quality together with a record peak power of 2.6W under passive mode locking.
Original languageEnglish
Title of host publication22nd IEEE International Semiconductor Laser Conference
PublisherIEEE
ISBN (Electronic)978-1-4244-5684-0
ISBN (Print)978-1-4244-5683-3
DOIs
Publication statusPublished - 22 Nov 2010
Event22nd IEEE International Semiconductor Laser Conference (ISLC) - Kyoto , Japan
Duration: 26 Sep 201030 Sep 2010

Conference

Conference22nd IEEE International Semiconductor Laser Conference (ISLC)
CountryJapan
CityKyoto
Period26/09/1030/09/10

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