Optimisation of furnace oxidation of silicon with respect to negative bias stress instability

V. Nayar; R Jackson; M. L. Filleul; K. Brunson; M. J. Uren; Alison M. Hodge

doi:10.1016/0167-9317(93)90128-R

Optimisation of furnace oxidation of silicon with respect to negative bias stress instability

V. Nayar, R Jackson, M. L. Filleul, K. Brunson, M. J. Uren, Alison M. Hodge

Aston STEM Education Centre

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Abstract

A study to observe gaseous impurity ingress into an atmospheric pressure thermal oxidation furnace was carried out using an in-situ probe. Experimental measurements of trace moisture and oxygen deep within the furnace revealed that the level of infiltration into the furnace was critically dependent on the inert gas flow rate during loading. Different process recipes led to different impurity residence times within the furnace once the furnace door was sealed. The level of moisture ingress was directly correlated with the level of negative bias stress instability observed for metal gated MOS capacitors.

Original language	English
Pages (from-to)	47-50
Number of pages	4
Journal	Microelectronic Engineering
Volume	22
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(93)90128-R
Publication status	Published - Aug 1993

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title = "Optimisation of furnace oxidation of silicon with respect to negative bias stress instability",

abstract = "A study to observe gaseous impurity ingress into an atmospheric pressure thermal oxidation furnace was carried out using an in-situ probe. Experimental measurements of trace moisture and oxygen deep within the furnace revealed that the level of infiltration into the furnace was critically dependent on the inert gas flow rate during loading. Different process recipes led to different impurity residence times within the furnace once the furnace door was sealed. The level of moisture ingress was directly correlated with the level of negative bias stress instability observed for metal gated MOS capacitors.",

author = "V. Nayar and R Jackson and Filleul, {M. L.} and K. Brunson and Uren, {M. J.} and Hodge, {Alison M.}",

year = "1993",

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AU - Nayar, V.

AU - Jackson, R

AU - Filleul, M. L.

AU - Brunson, K.

AU - Uren, M. J.

AU - Hodge, Alison M.

PY - 1993/8

Y1 - 1993/8

N2 - A study to observe gaseous impurity ingress into an atmospheric pressure thermal oxidation furnace was carried out using an in-situ probe. Experimental measurements of trace moisture and oxygen deep within the furnace revealed that the level of infiltration into the furnace was critically dependent on the inert gas flow rate during loading. Different process recipes led to different impurity residence times within the furnace once the furnace door was sealed. The level of moisture ingress was directly correlated with the level of negative bias stress instability observed for metal gated MOS capacitors.

AB - A study to observe gaseous impurity ingress into an atmospheric pressure thermal oxidation furnace was carried out using an in-situ probe. Experimental measurements of trace moisture and oxygen deep within the furnace revealed that the level of infiltration into the furnace was critically dependent on the inert gas flow rate during loading. Different process recipes led to different impurity residence times within the furnace once the furnace door was sealed. The level of moisture ingress was directly correlated with the level of negative bias stress instability observed for metal gated MOS capacitors.

UR - http://www.sciencedirect.com/science/article/pii/016793179390128R

U2 - 10.1016/0167-9317(93)90128-R

DO - 10.1016/0167-9317(93)90128-R

M3 - Article

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VL - 22

SP - 47

EP - 50

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Optimisation of furnace oxidation of silicon with respect to negative bias stress instability

Abstract

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