Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition. We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In) GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+.
|Journal||Proceedings of SPIE - International Society for Optical Engineering|
|Publication status||Published - 1 Mar 2019|
|Event||Novel In-Plane Semiconductor Lasers XVIII 2019 - San Francisco, United States|
Duration: 4 Feb 2019 → 7 Feb 2019
Bibliographical noteCopyright 2019 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
- Distributed feedback laser diodes
- Laser cooling
- Lateral grating
- Notched grating
- Optical communications
- Semiconductor lasers
- Sidewall grating