Recent progress in distributed feedback InGaN/GaN laser diodes

Thomas J. Slight; Scott Watson; Shaun Viola; Amit Yadav; Szymon Stanczyk; Szymon Grzanka; Steffan Gwyn; Edik Rafailov; Piotr Perlin; Stephen P. Najda; Mike Leszczyński; Mohsin Haji; Anthony E. Kelly

doi:10.1117/12.2507630

Recent progress in distributed feedback InGaN/GaN laser diodes

Thomas J. Slight, Scott Watson, Shaun Viola, Amit Yadav, Szymon Stanczyk, Szymon Grzanka, Steffan Gwyn, Edik Rafailov, Piotr Perlin, Stephen P. Najda, Mike Leszczyński, Mohsin Haji, Anthony E. Kelly

Research output: Contribution to journal › Conference article › peer-review

Abstract

Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition. We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In) GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+.

Original language	English
Article number	109390I
Journal	Proceedings of SPIE - International Society for Optical Engineering
Volume	10939
DOIs	https://doi.org/10.1117/12.2507630
Publication status	Published - 1 Mar 2019
Event	Novel In-Plane Semiconductor Lasers XVIII 2019 - San Francisco, United States Duration: 4 Feb 2019 → 7 Feb 2019

Bibliographical note

Copyright 2019 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

Keywords

Distributed feedback laser diodes
GaN
Laser cooling
Lateral grating
Notched grating
Optical communications
Semiconductor lasers
Sidewall grating

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10.1117/12.2507630

Recent progress in distributed feedback InGaN/GaN laser diodes
Copyright 2019 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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title = "Recent progress in distributed feedback InGaN/GaN laser diodes",

abstract = "Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition. We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In) GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+.",

keywords = "Distributed feedback laser diodes, GaN, Laser cooling, Lateral grating, Notched grating, Optical communications, Semiconductor lasers, Sidewall grating",

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AU - Slight, Thomas J.

AU - Watson, Scott

AU - Viola, Shaun

AU - Yadav, Amit

AU - Stanczyk, Szymon

AU - Grzanka, Szymon

AU - Gwyn, Steffan

AU - Rafailov, Edik

AU - Perlin, Piotr

AU - Najda, Stephen P.

AU - Leszczyński, Mike

AU - Haji, Mohsin

AU - Kelly, Anthony E.

N1 - Copyright 2019 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition. We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In) GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+.

AB - Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition. We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In) GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+.

KW - Distributed feedback laser diodes

KW - GaN

KW - Laser cooling

KW - Lateral grating

KW - Notched grating

KW - Optical communications

KW - Semiconductor lasers

KW - Sidewall grating

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ER -

Recent progress in distributed feedback InGaN/GaN laser diodes

Abstract

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Keywords

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