Recent progress in distributed feedback InGaN/GaN laser diodes

Thomas J. Slight, Scott Watson, Shaun Viola, Amit Yadav, Szymon Stanczyk, Szymon Grzanka, Steffan Gwyn, Edik Rafailov, Piotr Perlin, Stephen P. Najda, Mike Leszczyński, Mohsin Haji, Anthony E. Kelly

Research output: Contribution to journalConference article

Abstract

Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition. We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In) GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+.

Original languageEnglish
Article number109390I
JournalProceedings of SPIE - International Society for Optical Engineering
Volume10939
DOIs
Publication statusPublished - 1 Mar 2019
EventNovel In-Plane Semiconductor Lasers XVIII 2019 - San Francisco, United States
Duration: 4 Feb 20197 Feb 2019

Bibliographical note

Copyright 2019 SPIE. One print or electronic copy may be made for personal use only. Systematic reproduction, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

Keywords

  • Distributed feedback laser diodes
  • GaN
  • Laser cooling
  • Lateral grating
  • Notched grating
  • Optical communications
  • Semiconductor lasers
  • Sidewall grating

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  • Cite this

    Slight, T. J., Watson, S., Viola, S., Yadav, A., Stanczyk, S., Grzanka, S., Gwyn, S., Rafailov, E., Perlin, P., Najda, S. P., Leszczyński, M., Haji, M., & Kelly, A. E. (2019). Recent progress in distributed feedback InGaN/GaN laser diodes. Proceedings of SPIE - International Society for Optical Engineering, 10939, [109390I]. https://doi.org/10.1117/12.2507630